1/6/2022 | 8542326100 | DRK ELECTRONIC IC INTEGRAL / (MONOLITHIC - STORAGE DEVICE (CONFIGURATION \\ MEMORY) TYPE # ^ FLASH EEPROM C WITH 16 Mbit. (OPERATING TEMPERATURE RANGE: -40 ... +85 C) (NOT HAZARDOUS WASTE) | 0.03 | 54.25 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/6/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM STORAGE DEVICE WITH A MEMORY CAPACITY OF 128 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.11 | 272.01 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM (NOR) MEMORY DEVICE WITH A MEMORY CAPACITY OF 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C)(NOT HAZARDOUS WASTE) | 0.07 | 365.37 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A MEMORY DEVICE (CONFIGURATION MEMORY) OF THE FLASH-EEPROM TYPE WITH A VOLUME OF 4 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.04 | 42.05 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM TYPE STORAGE DEVICE WITH A MEMORY CAPACITY OF 512 KBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.08 | 969.76 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE (FPVM-CONFIGURATION MEMORY) OF FLASH-EEPROM TYPE WITH MEMORY SIZE OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 64.19 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE (FPVM-CONFIGURATION MEMORY) OF FLASH-EEPROM TYPE WITH MEMORY SIZE OF 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.25 | 348.47 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - MEMORY DEVICE FLASH EEPROM (NOR) WITH MEMORY 16 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.06 | 483.17 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/18/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE TYPE FLASH EEPROM (NOR) WITH MEMORY 64 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.36 | 385.33 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - A FLASH-EEPROM STORAGE DEVICE WITH A MEMORY CAPACITY OF 128 MBIT. (OPERATING TEMPERATURE RANGE: -40...+105 ?) (NOT HAZARDOUS WASTE) | 0.01 | 16.97 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |