1/20/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, NOT SCRAP OF ELECTRICAL EQUIPMENT: PHOTODIODE, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE, WORKING WAVE RANGE 1100 - 1600 NM, USED IN OPTICAL FIBER COMMUNICATIONS | 0.1 | 1851.1 | South Korea | INCHON AIRPORT KOREA | LLS JSC |
1/28/2022 | 8541490000 | SEMICONDUCTOR DEVICES - OPTOcouplers TCMT1106 WITH PHOTOTRANSISTOR OUTPUT. CONSIST OF LED AND PHOTOTRANSISTOR AND PRES. FOR USE IN PROGRAMMABLE LOGIC CONTROLLERS, MODEMS, ANSWERS. TYPE OF SEMICONDUCTOR GALLIUM ARSENIDE. | 1.33 | 784.61 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/19/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: OPTOCOUPLE, SEMICONDUCTOR, CONSISTING OF A LIGHT EMITTER AND A PHOTORECEIVER, CONNECTED BY AN OPTICAL CHANNEL, SEMICONDUCTOR TYPE - GALLIUM ARSENIDE, USED FOR SURFACE MOUNTING ON PRINTED BOARDS E | 0.08 | 20.33 | China | SHENZHEN CHINA | STOUT LLC |
1/30/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: SEMICONDUCTOR OPTOCOUPLE, CONSISTING OF A LIGHT EMITTER AND A PHOTO-RECEIVER COMBINED BY AN OPTICAL CHANNEL; TYPE OF SEMICONDUCTOR - GALLIUM ARSENIDE, DESIGNED FOR SURFACE MOUNTING ON PRINTED BOARDS | 0 | 3.92 | Japan | HONG KONG | ELSITON COMPONENT LLC |
1/24/2022 | 8541490000 | PHOTODIOD TSML1000. IS A NPN PHOTOTRANSISTOR IN A PLASTIC BODY. PHOTOTRANSISTOR MATERIAL GAALAS (ALUMINUM-GALLIUM ARSENIDE). INSTALLED ON SMD BOARD BY INSTALLATION. USED IN THE CE 307 METER AS A | 1.2 | 1600.28 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/19/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: OPTOCOUPLE, SEMICONDUCTOR, CONSISTING OF A LIGHT EMITTER AND A PHOTORECEIVER, CONNECTED BY AN OPTICAL CHANNEL, SEMICONDUCTOR TYPE - GALLIUM ARSENIDE, USED FOR SURFACE MOUNTING ON PRINTED BOARDS E | 0.08 | 129.23 | Malaysia | SHENZHEN CHINA | STOUT LLC |
1/19/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: OPTOCOUPLE, SEMICONDUCTOR, CONSISTING OF A LIGHT EMITTER AND A PHOTORECEIVER, CONNECTED BY AN OPTICAL CHANNEL, SEMICONDUCTOR TYPE - GALLIUM ARSENIDE, USED FOR SURFACE MOUNTING ON PRINTED BOARDS E | 0.03 | 158.03 | Malaysia | MANSFIELD CENTER | STOUT LLC |
1/17/2022 | 8541490000 | LIGHT EMITTING DIODES (SEMICONDUCTOR IS MADE FROM GALLIUM ARSENIDE AND INDIUM PHOSPHIDE, COMPONENT OF ELECTRICAL APPLIANCES BUILT AT PRODUCTION; | 1.08 | 128.9 | China | M O S K V A | INTERFORWARD LLC |
1/18/2022 | 8541490000 | Optocoupler H11L1S(TA). The optocoupler consists of a gallium-arsenide infrared LED at the input, optically coupled with a high-speed photodetector circuit at the output. THE PHOTO DETECTOR CIRCUIT CONTAINS A SCHMITT TRIGGER FOR PROTECTION AGAINST NOISE AND | 1.64 | 249.6 | Taiwan | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |