1/20/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES, NOT SCRAP OF ELECTRICAL EQUIPMENT: PHOTODIODE, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE, WORKING WAVE RANGE 1100 - 1600 NM, USED IN OPTICAL FIBER COMMUNICATIONS | 0.1 | 1851.1 | South Korea | INCHON AIRPORT KOREA | LLS JSC |
1/17/2022 | 8541410004 | LIGHT EMITTING DIODES, INORGANIC, IN A CASE, SINGLE (NOT ON A BOARD), NON LASER, INTENDED FOR INSTALLATION ON THE PANEL OF INDUSTRIAL EQUIPMENT, NOT SCRAP ELECTRICAL EQUIPMENT, SEMICONDUCTOR TYPE - GALLIUM ARSENIDE PHOSPIDE (GAASP), NON UV AND IR EMISSION | 0.14 | 351.1 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/10/2022 | 8541410002 | LIGHT EMITTING DIODES, INORGANIC, IN A CASE, DESIGNED FOR INSTALLATION ON THE PANEL OF INDUSTRIAL EQUIPMENT, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - ALUMINUM GALLIUM ARSENIDE, FORWARD VOLTAGE: 1.85 V | 0.01 | 29.91 | China | TIF RIVER FOLLS | STOUT LLC |
1/31/2022 | 8541410009 | PHOTODIODS. APPLIED FOR TRANSMISSION OF CABLE TELEVISION SIGNALS. DESIGNED FOR CONVERSION OF OPTICAL SIGNAL INTO RADIO FREQUENCY. OPERATING VOLTAGE 5 V. MAXIMUM INPUT OPTICAL POWER +4 dBm. TYPE OF SEMICONDUCTOR INDIUM-ARSENIDE GALI | 83 | 12473.4 | China | YICHANG | POINT OPORA LLC |
1/27/2022 | 8541410009 | CHIP RB-780B-190-10-4-SE IS A LASER DIODE (SEMICONDUCTOR). STRUCTURE: STRAINED STRUCTURE GROWN BY THE METHOD OF MULTI-QUANTUM WELLS AND STAGED GROWTH BY CHEMICAL VAPOR DEPOSITION GAAS (gallium arsenide) | 0.01 | 1971.27 | China | SHENZHEN CHINA | NPP INZHECT LLC |
1/28/2022 | 8541490000 | SEMICONDUCTOR DEVICES - OPTOcouplers TCMT1106 WITH PHOTOTRANSISTOR OUTPUT. CONSIST OF LED AND PHOTOTRANSISTOR AND PRES. FOR USE IN PROGRAMMABLE LOGIC CONTROLLERS, MODEMS, ANSWERS. TYPE OF SEMICONDUCTOR GALLIUM ARSENIDE. | 1.33 | 784.61 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/19/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: OPTOCOUPLE, SEMICONDUCTOR, CONSISTING OF A LIGHT EMITTER AND A PHOTORECEIVER, CONNECTED BY AN OPTICAL CHANNEL, SEMICONDUCTOR TYPE - GALLIUM ARSENIDE, USED FOR SURFACE MOUNTING ON PRINTED BOARDS E | 0.08 | 20.33 | China | SHENZHEN CHINA | STOUT LLC |
1/30/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: SEMICONDUCTOR OPTOCOUPLE, CONSISTING OF A LIGHT EMITTER AND A PHOTO-RECEIVER COMBINED BY AN OPTICAL CHANNEL; TYPE OF SEMICONDUCTOR - GALLIUM ARSENIDE, DESIGNED FOR SURFACE MOUNTING ON PRINTED BOARDS | 0 | 3.92 | Japan | HONG KONG | ELSITON COMPONENT LLC |
1/24/2022 | 8541490000 | PHOTODIOD TSML1000. IS A NPN PHOTOTRANSISTOR IN A PLASTIC BODY. PHOTOTRANSISTOR MATERIAL GAALAS (ALUMINUM-GALLIUM ARSENIDE). INSTALLED ON SMD BOARD BY INSTALLATION. USED IN THE CE 307 METER AS A | 1.2 | 1600.28 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/27/2022 | 8541410001 | LEDS ARE UNMOUNTED LIGHT EMITTING DIODES THAT CONVERT ELECTRIC ENERGY TO VISIBLE RADIATION, SEMICONDUCTOR TYPE PN: Gallium Arsenide (GAAS), COMMONLY NAMED LED . USED FOR MANUFACTURING SOURCE | 4.38 | 3536.07 | China | SHENZHEN CHINA | VERTEX TRADE LLC |