1/17/2022 | 3818009000 | GALLIUM ARSENIDE SEMICONDUCTOR WAFERS IN THE FORM OF DISC 4 INCH (100 MM) THICKNESS 0.63 MM, SINGLE-CRYSTAL GALLIUM ARSENIDE (GAAS) BASE WITH EPITAXIAL HETEROSTRUCTURE APPLIED ON THE SURFACE | 0.35 | 5981.65 | Taiwan | XINZHU CITY | NPF MIKRAN JSC |
1/25/2022 | 8541410006 | DIODES LIGHT EMITTING INFRARED, IN THE CASE, SERIES OSLON BLACK SFH4715AS . POWER SUPPLY, POWER CORD, SWITCHES ARE ABSENT. TYPE OF SEMICONDUCTOR GALLIUM ARSENIDE. | 1.4 | 4911.11 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/31/2022 | 9001900009 | UNSTRAIGHT OPTICAL ELEMENTS FROM GAAS (GAS ARSENIDE, METHOD OF OPTICAL PROCESSING - POLISHING, SPRAYING) ARE INTENDED FOR USE AS PART OF THE FEMTOSECOND INSTALLATION FOR VISION CORRECTION FEMTOVISUM PRODUCED BY OPTOSYSTEMS, ISP. | 0.1 | 2414.79 | Germany | JENA | OPTOSISTEMS LLC |
1/18/2022 | 3818009000 | SEMICONDUCTOR WATER FROM SINGLE-CRYSTAL GALLIUM ARSENIDE (GAAS) WITH SURFACE APPLIED EPITAXIAL HETEROSTRUCTURE IN THE FORM OF ULTRA-THIN LAYERS OF GALLIUM ARSENIDE AND INDIUM-GALLIUM ARSENIDE (INGAAS) WITH A TOTAL THICKNESS OF 3.6 MKM. PLATES | 0.86 | 12505.7 | China | SUZHOU | NPF MIKRAN JSC |
1/24/2022 | 8539514099 | LED MODULES FOR NON-HOUSEHOLD LED DEVICES ARE A LUMINAIRE LIGHTING ELEMENT STRUCTURALLY MADE IN THE FORM OF A PRINTED CIRCUIT WITH SOLDERED LIGHT EMITTING DIODES SEMICONDUCTOR TYPE: GALLIUM ARSENIDE (GAAS) | 165.4 | 12429.7 | China | SHENZHEN CHINA | VERTEX TRADE LLC |
1/17/2022 | 8541410004 | LIGHT EMITTING DIODES, INORGANIC, IN A CASE, SINGLE (NOT ON A BOARD), NON LASER, INTENDED FOR INSTALLATION ON THE PANEL OF INDUSTRIAL EQUIPMENT, NOT SCRAP ELECTRICAL EQUIPMENT, SEMICONDUCTOR TYPE - GALLIUM ARSENIDE PHOSPIDE (GAASP), NON UV AND IR EMISSION | 0.14 | 351.1 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/17/2022 | 8541490000 | LIGHT EMITTING DIODES (SEMICONDUCTOR IS MADE FROM GALLIUM ARSENIDE AND INDIUM PHOSPHIDE, COMPONENT OF ELECTRICAL APPLIANCES BUILT AT PRODUCTION; | 1.08 | 128.9 | China | M O S K V A | INTERFORWARD LLC |
1/31/2022 | 8541410009 | PHOTODIODS. APPLIED FOR TRANSMISSION OF CABLE TELEVISION SIGNALS. DESIGNED FOR CONVERSION OF OPTICAL SIGNAL INTO RADIO FREQUENCY. OPERATING VOLTAGE 5 V. MAXIMUM INPUT OPTICAL POWER +4 dBm. TYPE OF SEMICONDUCTOR INDIUM-ARSENIDE GALI | 83 | 12473.4 | China | YICHANG | POINT OPORA LLC |
1/28/2022 | 8541490000 | SEMICONDUCTOR DEVICES - OPTOcouplers TCMT1106 WITH PHOTOTRANSISTOR OUTPUT. CONSIST OF LED AND PHOTOTRANSISTOR AND PRES. FOR USE IN PROGRAMMABLE LOGIC CONTROLLERS, MODEMS, ANSWERS. TYPE OF SEMICONDUCTOR GALLIUM ARSENIDE. | 1.33 | 784.61 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/30/2022 | 8541490000 | PHOTO-SENSITIVE SEMICONDUCTOR DEVICES: SEMICONDUCTOR OPTOCOUPLE, CONSISTING OF A LIGHT EMITTER AND A PHOTO-RECEIVER COMBINED BY AN OPTICAL CHANNEL; TYPE OF SEMICONDUCTOR - GALLIUM ARSENIDE, DESIGNED FOR SURFACE MOUNTING ON PRINTED BOARDS | 0 | 3.92 | Japan | HONG KONG | ELSITON COMPONENT LLC |