1/12/2022 | 8542323100 | DYNAMIC RANDOM MEMORY (DOS) WITH A MEMORY OF 256 MBIT USED IN ELECTRONIC CONTROL SYSTEMS OF WASHING MACHINES | 0.08 | 72.83 | Czechia | PRIBOR | REMSCLAD PRACHKA LLC |
1/12/2022 | 8542323100 | DYNAMIC RANDOM MEMORY (DOS) WITH A MEMORY OF 256 MBIT USED IN ELECTRONIC CONTROL SYSTEMS OF WASHING MACHINES | 0.02 | 19.33 | Czechia | PRIBOR | REMSCLAD PRACHKA LLC |
1/12/2022 | 8542323100 | DYNAMIC RANDOM MEMORY (DOS) WITH 512 MB MEMORY, USED IN ELECTRONIC CONTROL SYSTEMS OF WASHING MACHINES | 0.08 | 35.34 | Taiwan | PRIBOR | REMSCLAD PRACHKA LLC |
1/5/2022 | 8542323100 | INTEGRAL CIRCUIT, SYNCHRONIZED DYNAMIC MEMORY WITH RANDOM SAMPLE ORDER (SDRAM), VOLUME 128 Mbit, IN A PLASTIC CASE VFBGA-90, FOR MOUNTING ON A PRINTED BOARD. USED FOR MANUFACTURE OF RADIO-ELECTRONIC EQUIPMENT. | 0.32 | 7004.44 | China | HONG KONG | T COMPONENT SP LLC |
1/18/2022 | 8542323100 | INTEGRATED MICROCIRCUIT OF ENERGY DEPENDENT MEMORY - RANDOM MEMORY DEVICE. IT IS USED AS A PART OF COMPLEX ELECTRONIC DEVICES FOR TEMPORARY STORAGE OF INFORMATION. | 0.59 | 2235 | Taiwan | MOSCOW RUSSIA | START XXI CENTURY LLC |
1/28/2022 | 8542323100 | INTEGRATED MONOLITHIC ANALOGUE DYNAMIC MEMORY CHIP WITH RANDOM ACCESS, MEMORY VOLUME 512 MBIT, USED IN ELECTRONICS IN MODULES FOR CALCULATION OF SET PARAMETERS. GENERAL CIVIL APPLICATION. NOT FOR MILITARY PURPOSES. NOT APPLICABLE IN | 0.01 | 137.43 | Taiwan | SAR HONG KONG | MICROSAN LLC |
1/14/2022 | 8542323100 | MICROSCHEMICS OF SYNCHRONOUS DYNAMIC MEMORY (SDRAM) ELECTRONIC INTEGRAL DIGITAL, ASSEMBLED, WITH OUTPUTS; DESIGNED FOR MOUNTING ON PRINTED BOARDS OF COMPUTER EQUIPMENT, INDUSTRIAL ELECTRONICS EQUIPMENT, MEMORY 256MBIT. NOT USED | 0.91 | 2329.87 | Taiwan | HONG KONG | VEST OST LLC |