1/25/2022 | 8541100009 | DIODE MODULE A DEVICE CONSISTING OF TWO INTERCONNECTED DIODES LOCATED IN A SINGLE PLASTIC CASE ON THE UPPER SURFACE OF THE MODULE 3 CONNECTING TERMINALS ARE LOCATED. TYPE OF SEMICONDUCTOR : SILICON, INTENDED, OPERATING PRINCIPLE: | 28.4 | 1168.7 | China | MOSCOW RUSSIA | ELLOY LLC |
1/24/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 5.42 | 1285.71 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/10/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 1.35 | 322.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8541100009 | DIODE MBR0540-TP. THEY ARE PN JUNCTIONS MADE ON A SILICON CRYSTAL. ENCLOSED IN A RECTANGULAR PLASTIC CASE WITH TWO NICKEL TERMINALS. | 2.73 | 831.8 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | DIODE SD103CW-E3-08 IS A GLASS CYLINDER WITH TWO NICKEL TERMINALS. IS A P-N TRANSITION MADE ON A SILICON CRYSTAL. USED IN ELECTRIC ENERGY METERS TO CONVERT VARIABLE VOLTAGE TO | 0.9 | 842.7 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED. | 10.15 | 2523 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | LIMITING DIODE SMBJ150A-E3/52. A DIODE FOR SUPPRESSING TRANSIENT VOLTAGE SURGE IS A PN JUNCTION MADE ON A SILICON PLATE. THE DIODE IS PACKED IN A PLASTIC CASE, FROM THE ENDS OF WHICH THERE ARE TERMINALS FOR INSTALLATION ON THE BOARD | 0.82 | 187.5 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/13/2022 | 8541100009 | SEMICONDUCTOR DIODES DF10S - BRIDGE RECTIFIERS, IN THE CASE 8.5*6.5*3.3 MM WITH SURFACE MOUNTING TERMINALS ON THE BOARD. DESIGNED FOR ELECTRICITY CONSUMPTION CONTROL EQUIPMENT. TECHNICAL DATA: VF - FORWARD VOLTAGE 1.1 V, I | 14 | 1622.75 | China | KIRCHHEIM BEI MUNCHEN GERMANY | SCANTI LLC |
1/17/2022 | 8541100009 | DIODE BRIDGE SDB107-TP. IS 4 SILICON DIODES IN A PLASTIC CASE WITH RIGID TERMINALS FOR MOUNTING ON A PRINTED BOARD. OPERATING PRINCIPLE OF A DIODE BRIDGE: AC CURRENT HAS TWO HALF-WAVE: POSITIVE AND NEGATIVE. EACH SHOULDER | 58.61 | 4101.5 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |