1/19/2022 | 8541290000 | TRANSISTOR - AN ELECTRONIC DEVICE FROM A SEMICONDUCTOR MATERIAL, USUALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL THE CURRENT IN THE ELECTRICAL CIRCUIT. COMMONLY USED FOR AMPLIFICATION, GENERATION AND CONVERSION OF ELECTRICAL SIGNALS | 0.8 | 1283.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/11/2022 | 8541290000 | THE STT6N3LLH6 TRANSISTOR.IS AN N-CHANNEL MOSFET IN A PLASTIC RECTANGULAR CASE WITH SOLDER TERMINALS. THERE IS A METAL PLATE CONNECTED TO ONE OF THE TERMINALS ON THE REVERSE SIDE. | 1.15 | 27033.8 | China | Hefey | ENERGOMERA JSC |
1/10/2022 | 8541290000 | TRANSISTOR - AN ELECTRONIC DEVICE FROM A SEMICONDUCTOR MATERIAL, USUALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL THE CURRENT IN THE ELECTRICAL CIRCUIT. COMMONLY USED FOR AMPLIFICATION, GENERATION AND CONVERSION OF ELECTRICAL SIGNALS | 0.5 | 1369.01 | China | HONG KONG | SIBELKOM LOGISTIC LLC |
1/26/2022 | 8541290000 | TRANSISTOR, IS AN ELECTRONIC DEVICE OF SEMICONDUCTOR MATERIAL, GENERALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL CURRENT IN AN ELECTRICAL CIRCUIT, USED TO AMPLIFY, GENERATE AND CONVERT ELECTRIC | 1.71 | 918.84 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/18/2022 | 8541290000 | THE STT6N3LLH6 TRANSISTOR.IS AN N-CHANNEL MOSFET IN A PLASTIC RECTANGULAR CASE WITH SOLDER TERMINALS. THERE IS A METAL PLATE CONNECTED TO ONE OF THE TERMINALS ON THE REVERSE SIDE. | 1.9 | 35321.2 | China | Hefey | ENERGOMERA JSC |
1/13/2022 | 8541290000 | TRANSISTOR, IS AN ELECTRONIC DEVICE OF SEMICONDUCTOR MATERIAL, GENERALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL CURRENT IN AN ELECTRICAL CIRCUIT, USED TO AMPLIFY, GENERATE AND CONVERT ELECTRIC | 1.92 | 887.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/17/2022 | 8541290000 | STN1NK80Z TRANSISTOR IS A SOLID-STATE DEVICE MADE BY MOS TECHNOLOGY (METAL OXIDE SEMICONDUCTOR) FOR SURFACE MOUNTING ON PCB TERMINALS OF RELAY PROTECTION CABINETS. | 10.92 | 5957.09 | China | CHEBOKSARY RUSSIA | ELEKKOM LOGISTIC LLC |
1/10/2022 | 8541290000 | TRANSISTORS: IGBT TRANSISTOR, CONNECTION DIAGRAM - THREE INDEPENDENT HALF-BRIDGES. INTENDED FOR BUILDING A VOLTAGE INVERTER. IGBT HAS THREE EXTERNAL TERMINALS: EMMITTER, COLLECTOR, SHUTTER. | 193.5 | 35426.2 | Slovakia | Nuremberg Germany | SCIENTIFIC AND PRODUCTION ASSOCIATION ETALON LLC |