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FInd Latest Russia Import Data of Terminal under HS Code 8541100009

Discover latest Russia import data of Terminal under HS code 8541100009. Search Russia imports data by Country, Product Name, HS Code Price, buyer, supplier name, Port & shipping information. Ultilize these crucial insights for organizing successful marketing strategy. Scale your Business with our authentic Russia Import Data.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/25/20228541100009DIODE MODULE A DEVICE CONSISTING OF TWO INTERCONNECTED DIODES LOCATED IN A SINGLE PLASTIC CASE ON THE UPPER SURFACE OF THE MODULE 3 CONNECTING TERMINALS ARE LOCATED. TYPE OF SEMICONDUCTOR : SILICON, INTENDED, OPERATING PRINCIPLE:28.41168.7ChinaMOSCOW  RUSSIAELLOY LLC
1/24/20228541100009SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED.5.421285.71ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/10/20228541100009SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED.1.35322.23ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/26/20228541100009DIODE MBR0540-TP. THEY ARE PN JUNCTIONS MADE ON A SILICON CRYSTAL. ENCLOSED IN A RECTANGULAR PLASTIC CASE WITH TWO NICKEL TERMINALS.2.73831.8ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/18/20228541100009DIODE SD103CW-E3-08 IS A GLASS CYLINDER WITH TWO NICKEL TERMINALS. IS A P-N TRANSITION MADE ON A SILICON CRYSTAL. USED IN ELECTRIC ENERGY METERS TO CONVERT VARIABLE VOLTAGE TO0.9842.7ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/18/20228541100009SCHOTTKY DIODE STPS1L30A IS A P-N JUNCTION MADE ON A SILICON CRYSTAL IN A PLASTIC CASE WITH TWO NICKEL TERMINALS. DOES NOT HAVE PHOTO SENSITIVITY. SURFACE MOUNTED.10.152523ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/18/20228541100009LIMITING DIODE SMBJ150A-E3/52. A DIODE FOR SUPPRESSING TRANSIENT VOLTAGE SURGE IS A PN JUNCTION MADE ON A SILICON PLATE. THE DIODE IS PACKED IN A PLASTIC CASE, FROM THE ENDS OF WHICH THERE ARE TERMINALS FOR INSTALLATION ON THE BOARD0.82187.5ChinaSTAVROPOL DISTRICT S NEW BINARADKAENERGOMERA JSC
1/31/20228541100009DIODE CM1214-02MR (ONSEMI). CHARACTERISTICS: POLARITY: BIDIRECTIONAL. TERMINAL TYPE: SMD/SMT. MOUNTING TYPE: SURFACE MOUNTING. NUMBER OF CHANNELS: 2 CHANNEL. DIRECTION TYPE: BIDIRECTIONAL. OPERATING VOLTAGE: 7 V. POWER DISSIPATION: 400 MW.0.08474.7ChinaSHENZHEN  CHINAQUANTUM LLC
1/18/20228541100009RECTIFICATION DIODE FOR SUPPRESSION OF TRANSIENT VOLTAGE SURGETS (NOT LIGHT-EMITING, NOT CONTAINING PRECIOUS METALS) FOR MOUNTING ON PRINTED BOARDS, NOT A LIGHTING EQUIPMENT. TERMINAL TYPE: SMD/SMT, OPERATING VOLTAGE: 5 V, BREAKDOWN VOLTAGE:0.3811138.7ChinaST PETERSBURG  RUSSIAORBIS SOLUTIONS LLC
1/13/20228541100009SEMICONDUCTOR DIODES DF10S - BRIDGE RECTIFIERS, IN THE CASE 8.5*6.5*3.3 MM WITH SURFACE MOUNTING TERMINALS ON THE BOARD. DESIGNED FOR ELECTRICITY CONSUMPTION CONTROL EQUIPMENT. TECHNICAL DATA: VF - FORWARD VOLTAGE 1.1 V, I141622.75ChinaKIRCHHEIM BEI MUNCHEN GERMANYSCANTI LLC

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