1/10/2022 | 8542339000 | THE LM211DT INTEGRATED MONOLITHIC CHIP IS A DIFFERENTIAL COMPARATOR MADE IN MOS TECHNOLOGY. INTENDED FOR COMPARISON OF CONTINUOUSLY CHANGING SIGNALS. ITS COMPOSITION HAS ACTIVE ELEMENTS (OPERATIONAL AMPLIFIER) | 1.04 | 337.2 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8542399010 | MONOLITHIC INTEGRAL CHIP AOZ1280CI. MADE ON MOP TECHNOLOGY. IS AN ACTIVE VOLTAGE REGULATOR FOR THE SUPPLY VOLTAGE. CONSISTS OF ACTIVE TRANSISTOR COMPONENTS, AMPLIFIER AND PASSIVE RESISTOR COMPONENTS. | 1.69 | 3383.72 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8542399010 | MONOLITHIC INTEGRATED CHIP TPS560200DBVR. MADE ON MOP TECHNOLOGY. IS AN ADJUSTABLE VOLTAGE CONVERTER. THE CHIP CONTAINS ACTIVE COMPONENTS - FIELD TRANSISTORS, PASSIVE | 1.37 | 2003 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/21/2022 | 8542311001 | MICROPROCESSORS MANUFACTURED BY A TECHNOLOGICAL PROCESS OF NO MORE THAN 32 NANOMETERS, MANUFACTURED USING SEMICONDUCTOR TECHNOLOGY AND PLACED ON A MULTILAYER GLASS-TEXTOLITE PCB, FOR PERSONAL COMPUTERS, DOES NOT CONTAIN THE FUNCTION | 16.8 | 10292.8 | China | KALININGRAD AIRPORT KHRABROVO | LOGISTICS M LLC |
1/21/2022 | 8542311001 | MICROPROCESSORS MANUFACTURED BY A TECHNOLOGICAL PROCESS OF NO MORE THAN 32 NANOMETERS, MANUFACTURED USING SEMICONDUCTOR TECHNOLOGY AND PLACED ON A MULTILAYER GLASS-TEXTOLITE PCB, FOR PERSONAL COMPUTERS, DOES NOT CONTAIN THE FUNCTION | 1.52 | 7505.03 | China | KALININGRAD AIRPORT KHRABROVO | LOGISTICS M LLC |
1/11/2022 | 8542323900 | ELECTRONIC INTEGRATED MONOLITHIC DIGITAL - DYNAMIC RANDOM MEMORY DEVICES (DOZE) WITH 2 GB MEMORY, FOR SUPPLY VOLTAGE 1.283 - 1.45 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR) SRAN | 0.01 | 55.1 | China | HONG KONG | KOMPOTRADE LLC |
1/11/2022 | 8542399010 | ELECTRONIC INTEGRATED MONOLITHIC ANALOGUE, FOR A VOLTAGE OF 1.7 - 5.5 V, OBTAINED BY CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR), CONTAINING ACTIVE ELEMENTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, ASSEMBLED VKO | 0.01 | 32.78 | China | HONG KONG | KOMPOTRADE LLC |
1/11/2022 | 8542399010 | ELECTRONIC INTEGRATED MONOLITHIC ANALOGUE, FOR VOLTAGE 3 - 5.5 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR), CONTAINING ACTIVE ELEMENTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, ASSEMBLED INTO | 0.01 | 19.32 | China | HONG KONG | KOMPOTRADE LLC |
1/11/2022 | 8542399010 | MONOLITHIC DIGITAL INTEGRATED ELECTRONIC CIRCUITS FOR VOLTAGE 3 - 5.5 V, OBTAINED BY CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR), CONTAINING ACTIVE ELEMENTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, ASSEMBLED IN A CASING | 0.01 | 56.33 | China | HONG KONG | KOMPOTRADE LLC |
1/11/2022 | 8542399010 | MONOLITHIC ANALOGUE INTEGRATED ELECTRONIC CIRCUITS FOR 1 V VOLTAGE OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR) CONTAINING ACTIVE ELEMENTS MADE ON A SINGLE SEMICONDUCTOR CRYSTAL ASSEMBLED IN CASES WITH | 0.47 | 2890.64 | China | HONG KONG | KOMPOTRADE LLC |