1/31/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF MOSFET TRANSISTOR, SEMICONDUCTOR TYPE: SI - SILICON | 0.13 | 426 | Malaysia | HAMBURG AIRPORT GERMANY | STOUT LLC |
1/19/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3.7 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE SI - SILICON | 0.08 | 245.18 | Malaysia | SHENZHEN CHINA | STOUT LLC |
1/26/2022 | 8541100009 | DIODES, EXCEPT FOR PHOTODIODES AND LIGHT EMITTING DIODES, NOT ELECTRICAL EQUIPMENT SCRAP: DIODES FOR SUPPRESSION OF TRANSIENT VOLTAGE SURGETS, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - SILICON, INTENDED FOR USE IN INDUSTRIAL ELECTRONICS, FOR POV | 0.01 | 5.8 | Malaysia | SHENZHEN CHINA | RONTA LLC |
1/26/2022 | 8541100009 | DIODES, EXCEPT FOR PHOTODIODES AND LIGHT EMITTING DIODES, NOT ELECTRICAL EQUIPMENT SCRAP: DIODES FOR SUPPRESSION OF TRANSIENT VOLTAGE SURGETS, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - SILICON, INTENDED FOR USE IN INDUSTRIAL ELECTRONICS, FOR POV | 0.05 | 14.5 | Malaysia | SHENZHEN CHINA | RONTA LLC |
1/26/2022 | 8541100009 | DIODES, EXCEPT FOR PHOTODIODES AND LIGHT EMITTING DIODES, NOT ELECTRICAL EQUIPMENT SCRAP: DIODES FOR SUPPRESSION OF TRANSIENT VOLTAGE SURGETS, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - SILICON, INTENDED FOR USE IN INDUSTRIAL ELECTRONICS, FOR POV | 0.03 | 14.7 | Malaysia | SHENZHEN CHINA | RONTA LLC |
1/26/2022 | 8541100009 | DIODES, EXCEPT FOR PHOTODIODES AND LIGHT EMITTING DIODES, NOT ELECTRICAL EQUIPMENT SCRAP: DIODES FOR SUPPRESSION OF TRANSIENT VOLTAGE SURGETS, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - SILICON, INTENDED FOR USE IN INDUSTRIAL ELECTRONICS, FOR POV | 0 | 6.71 | Malaysia | SHENZHEN CHINA | RONTA LLC |
1/26/2022 | 8541100009 | DIODES, EXCEPT PHOTODIODES AND LIGHT EMITTING DIODES, NOT ELECTRICAL EQUIPMENT SCRAP: SCHOTTKY DIODES, SEMICONDUCTOR, SEMICONDUCTOR TYPE - SILICON, INTENDED FOR USE IN INDUSTRIAL ELECTRONICS, FOR SURFACE MOUNTING ON PRINTED BOARDS | 0.05 | 54.54 | Malaysia | SHENZHEN CHINA | RONTA LLC |
1/26/2022 | 8541100009 | DIODES, EXCEPT PHOTODIODES AND LIGHT EMITTING DIODES, NOT SCRAP OF ELECTRICAL EQUIPMENT: GENERAL PURPOSE DIODES, SEMICONDUCTOR, TYPE OF SEMICONDUCTOR - SILICON, INTENDED FOR USE IN INDUSTRIAL ELECTRONICS, FOR SURFACE MOUNTING ON PRINTING | 0.01 | 9.42 | Malaysia | SHENZHEN CHINA | RONTA LLC |
1/26/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 0.225 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: BIPOLAR TRANSISTORS, TYPE OF SEMICONDUCTOR: SI - SILICON | 0.2 | 147.76 | Malaysia | SHENZHEN CHINA | STOUT LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISSIPATION 28.8 W, NOT SCRAP ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF FIELD TRANSISTORS, SEMICONDUCTOR TYPE: GAN-ON-SIC (NIT | 0.2 | 3710.87 | Malaysia | SHENZHEN CHINA | STOUT LLC |