1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.04 | 25.42 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICE: RECTIFYING DIODE. PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 1A. SIZE 4.75 X 2.95 X 2.2MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 21.41 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 20V. SCATTERING POWER 1.6W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 4.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541600000 | PIEZOELECTRIC CRYSTALS (QUARTZ RESONATOR) ASSEMBLED FOR USE IN RADIO ENGINEERING AND ELECTRICAL INDUSTRY FOR THE PURPOSE OF CONVERTING ELECTRIC SIGNAL INTO ACOUSTIC SIGNAL IN ULTRASONIC RANGE, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.15 | 537.05 | China | EKATERENBURG | VEST OST LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES N-CHANNEL TRANSISTOR. POWER DISPOSION 190W. VOLTAGE COLLECTOR-EMTTER 600V. CURRENT 33A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. | 1.15 | 1703.78 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/23/2022 | 8541300009 | SEMICONDUCTOR DEVICE: TRIAC. MAXIMUM REPEATED VOLTAGE 600 V. MAXIMUM CURRENT 50 MA. DIMENSIONS 10.3 X 4.7 X 9.4MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 5.16 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/23/2022 | 8541290000 | SEMICONDUCTOR DEVICE: NPN-CHANNEL TRANSISTOR. VOLTAGE COLLECTOR-EMTTER 150V. CURRENT 8A. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.83 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541300009 | SEMICONDUCTOR DEVICE: THYRISTOR. MAXIMUM SHUTTER RELEASE VOLTAGE 2.5V. REPEATING PEAK REVERSE VOLTAGE 800V. DIMENSIONS 10.28 X 4.82 X 15.75MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. APPLICABLE IN ELECTRICAL ENGINEERING | 0.01 | 9.14 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICES BIPOLAR TRANSISTOR. MAXIMUM POWER DISSIPATION 306 W. VOLTAGE COLLECTOR-EMMITTER 600 V. DIMENSIONS 16.13 X 5.21 X 21.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.02 | 7.68 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |