1/21/2022 | 8542319010 | MONOLITHIC INTEGRATED CIRCUITS, CONSISTING OF A CASE, DIODES INCLUDED IN IT - ZENERITRONS, TRANSISTORS, PERMANENT FILM RESISTORS, PERMANENT CAPACITORS, WHICH FORM IN THE MASS (ESSENTIALLY) AND ON THE SURFACE OF THE SEMICONDUCTOR | 0.13 | 216.24 | China | SHENZHEN CHINA | RIKOR ELECTRONICS OJSC THROUGH STS LOGISTICS LLC |
1/21/2022 | 8542319010 | MONOLITHIC INTEGRATED CIRCUITS, CONSISTING OF A CASE, DIODES INCLUDED IN IT - ZENERITRONS, TRANSISTORS, PERMANENT FILM RESISTORS, PERMANENT CAPACITORS, WHICH FORM IN THE MASS (ESSENTIALLY) AND ON THE SURFACE OF THE SEMICONDUCTOR | 0.1 | 878.75 | China | SHENZHEN CHINA | RIKOR ELECTRONICS OJSC THROUGH STS LOGISTICS LLC |
1/21/2022 | 8542319010 | MONOLITHIC INTEGRATED CIRCUITS, CONSISTING OF A CASE, DIODES INCLUDED IN IT - ZENERITRONS, TRANSISTORS, PERMANENT FILM RESISTORS, PERMANENT CAPACITORS, WHICH FORM IN THE MASS (ESSENTIALLY) AND ON THE SURFACE OF THE SEMICONDUCTOR | 0.07 | 478.03 | China | SHENZHEN CHINA | RIKOR ELECTRONICS OJSC THROUGH STS LOGISTICS LLC |
1/21/2022 | 8542319010 | MONOLITHIC INTEGRATED CIRCUITS, CONSISTING OF A CASE, DIODES INCLUDED IN IT - ZENERITRONS, TRANSISTORS, PERMANENT FILM RESISTORS, PERMANENT CAPACITORS, WHICH FORM IN THE MASS (ESSENTIALLY) AND ON THE SURFACE OF THE SEMICONDUCTOR | 0.69 | 8096.49 | China | SHENZHEN CHINA | RIKOR ELECTRONICS OJSC THROUGH STS LOGISTICS LLC |
1/21/2022 | 8542319010 | MONOLITHIC INTEGRATED CIRCUITS, CONSISTING OF A CASE, DIODES INCLUDED IN IT - ZENERITRONS, TRANSISTORS, PERMANENT FILM RESISTORS, PERMANENT CAPACITORS, WHICH FORM IN THE MASS (ESSENTIALLY) AND ON THE SURFACE OF THE SEMICONDUCTOR | 0.1 | 633.95 | China | SHENZHEN CHINA | RIKOR ELECTRONICS OJSC THROUGH STS LOGISTICS LLC |
1/28/2022 | 8542319010 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUIT CONSISTING OF A CASE AND DIODES INCLUDED IN IT (ZENERITRONS, TRANSISTORS, CONSTANT FILM RESISTORS | 1.36 | 5133.6 | Philippines | ARZAMAS | RIKOR ELECTRONICS OJSC THROUGH STS LOGISTICS LLC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 3.6 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT SCRAP | 0.14 | 5663.66 | China | MOSCOW CITY | DELAN JSC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 12.73 | China | MOSCOW CITY | DELAN JSC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 151.44 | China | MOSCOW CITY | DELAN JSC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 36.54 | China | MOSCOW CITY | DELAN JSC |