1/24/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 1 | 1915.57 | China | CHANGZHOU CHINA | NPP TEPLOVODOKHRAN LLC |
1/31/2022 | 8542399010 | MONOLITHIC INTEGRAL MICROCIRCUIT - LDO VOLTAGE REGULATORS WITH LOW MINIMUM BREAKING CURRENT IN 1A. A DEVICE PLACED IN A NON-REMOVABLE CASE, HAVING CHARACTERISTICS DEFINED BY THE MANUFACTURER AND TECHNICAL SPECIFICATION, FOR APPLICATION IN ELECTRICAL | 5 | 3522.3 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 5.78 | 1301.96 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 116.91 | 66519.9 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MONOLITHIC INTEGRAL MICROCIRCUIT - LDO VOLTAGE REGULATORS WITH LOW MINIMUM BREAKING CURRENT IN 1A. A DEVICE PLACED IN A NON-REMOVABLE CASE, HAVING CHARACTERISTICS DEFINED BY THE MANUFACTURER AND TECHNICAL SPECIFICATION, FOR APPLICATION IN ELECTRICAL | 0.8 | 2692.1 | China | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |
1/10/2022 | 8542399010 | MONOLITHIC INTEGRAL MICROCIRCUIT - LDO VOLTAGE REGULATORS WITH LOW MINIMUM BREAKING CURRENT IN 1A. A DEVICE PLACED IN A NON-REMOVABLE CASE, HAVING CHARACTERISTICS DEFINED BY THE MANUFACTURER AND TECHNICAL SPECIFICATION, FOR APPLICATION IN ELECTRICAL | 0.5 | 4539.29 | China | HONG KONG | SIBELKOM LOGISTIC LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 3.64 | 1690.11 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/26/2022 | 8542399010 | MULTILAYER MONOLITHIC INTEGRATED MICROCIRCUIT WITH BUILT-IN POWER TRANSISTORS, DIODES AND RESISTORS. IT IS MANUFACTURED ON A SEMICONDUCTOR SUBSTRATE AND PLACED IN A NON-REMOVABLE CASE MADE FROM DIELECTRIC MATERIAL - PLASTIC. | 3.56 | 1325.42 | China | RYAZAN OBLAST | NPP TEPLOVODOKHRAN LLC |
1/10/2022 | 8542399010 | MONOLITHIC INTEGRAL MICROCIRCUIT - LDO VOLTAGE REGULATORS WITH LOW MINIMUM BREAKING CURRENT IN 1A. A DEVICE PLACED IN A NON-REMOVABLE CASE, HAVING CHARACTERISTICS DEFINED BY THE MANUFACTURER AND TECHNICAL SPECIFICATION, FOR APPLICATION IN ELECTRICAL | 3.84 | 30127.4 | China | HONG KONG | SIBELKOM LOGISTIC LLC |
1/19/2022 | 8542399010 | MONOLITHIC INTEGRAL MICROCIRCUIT - LDO VOLTAGE REGULATORS WITH LOW MINIMUM BREAKING CURRENT IN 1A. A DEVICE PLACED IN A NON-REMOVABLE CASE, HAVING CHARACTERISTICS DEFINED BY THE MANUFACTURER AND TECHNICAL SPECIFICATION, FOR APPLICATION IN ELECTRICAL | 0.01 | 107.2 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |