1/31/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS - FRAM MEMORY CHIP (FERROELECTRIC RANDOM RAM MEMORY) FM25CL64B-GTR WITH 64KBIT MEMORY AND 3.3V SUPPLY VOLTAGE, WITH SPI INTERFACE SUPPORT AND NON-SHAPING CAPABILITY | 14.56 | 25254.8 | Thailand | ST PETERSBURG RUSSIA | ALR LLC |
1/27/2022 | 8542329000 | MONOLITHIC ELECTRONIC INTEGRATED SCHEME - FERROELECTRIC RANDOM MEMORY RAM MEMORY, USED FOR ASSEMBLY OF PRODUCTS AND ELECTRONIC BOARDS. | 0.07 | 1152.99 | Thailand | BEIJING CHINA | RU ELECTRONICS LLC |
1/21/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.43 | 1829.43 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/24/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY F-RAM WITH A VOLUME OF 16 KBIT. (OPERATING TEMPERATURE RANGE: -40...+125 C) (NOT HAZARDOUS WASTE) | 0.02 | 25.31 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 62.33 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.24 | 914.97 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL SCHEMES, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, F-RAM MEMORY, MEMORY SIZE: 1 Mbit, VOLTAGE: 2-3.6 V, WORKING TEMPERATURE: -40-+85 ?, TOTAL-291 PCS; | 0.3 | 1388.51 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, F-RAM MEMORY, MEMORY SIZE: 64 KBIT, VOLTAGE: 2.7-3.65 V, WORKING TEMPERATURE: -40-+85 ?, TOTAL-500 PCS; | 0.2 | 1724.34 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/24/2022 | 8542329000 | ELECTRONIC INTEGRATED FERROELECTRIC RAM MEMORY DEVICES FRAM ASSEMBLED IN CASES WITH OUTPUTS FOR MOUNTING ON PRINTED BOARDS IN SYSTEMS OF INDUSTRIAL ELECTRONICS OF CIVIL PURPOSE. DO NOT CONTAIN CRYPTOGRAPHY | 0.05 | 1066.53 | China | SHENZHEN CHINA | VEST OST LLC |
1/20/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.02 | 85.21 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |