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FInd Latest Russia Import Data of Ram memory under HS Code 8542329000

Discover latest Russia import data of Ram memory under HS code 8542329000. Search Russia imports data by Country, Product Name, HS Code Price, buyer, supplier name, Port & shipping information. Ultilize these crucial insights for organizing successful marketing strategy. Scale your Business with our authentic Russia Import Data.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/31/20228542329000ELECTRONIC INTEGRAL CIRCUITS - FRAM MEMORY CHIP (FERROELECTRIC RANDOM RAM MEMORY) FM25CL64B-GTR WITH 64KBIT MEMORY AND 3.3V SUPPLY VOLTAGE, WITH SPI INTERFACE SUPPORT AND NON-SHAPING CAPABILITY14.5625254.8ThailandST PETERSBURG  RUSSIAALR LLC
1/27/20228542329000MONOLITHIC ELECTRONIC INTEGRATED SCHEME - FERROELECTRIC RANDOM MEMORY RAM MEMORY, USED FOR ASSEMBLY OF PRODUCTS AND ELECTRONIC BOARDS.0.071152.99ThailandBEIJING CHINARU ELECTRONICS LLC
1/21/20228542329000ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE)0.431829.43ThailandMANSFIELD CENTERPM ELECTRONICS LLC
1/24/20228542329000ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY F-RAM WITH A VOLUME OF 16 KBIT. (OPERATING TEMPERATURE RANGE: -40...+125 C) (NOT HAZARDOUS WASTE)0.0225.31ThailandMANSFIELD CENTERPM ELECTRONICS LLC
1/18/20228542329000ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE)0.0162.33ThailandMANSFIELD CENTERPM ELECTRONICS LLC
1/18/20228542329000ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE)0.24914.97ThailandMANSFIELD CENTERPM ELECTRONICS LLC
1/30/20228542329000ELECTRONIC INTEGRAL SCHEMES, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, F-RAM MEMORY, MEMORY SIZE: 1 Mbit, VOLTAGE: 2-3.6 V, WORKING TEMPERATURE: -40-+85 ?, TOTAL-291 PCS;0.31388.51United States of AmericaTSUEN WAN HONG KONGSPHERE OF ELECTRONICS LLC
1/30/20228542329000ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, F-RAM MEMORY, MEMORY SIZE: 64 KBIT, VOLTAGE: 2.7-3.65 V, WORKING TEMPERATURE: -40-+85 ?, TOTAL-500 PCS;0.21724.34United States of AmericaTSUEN WAN HONG KONGSPHERE OF ELECTRONICS LLC
1/24/20228542329000ELECTRONIC INTEGRATED FERROELECTRIC RAM MEMORY DEVICES FRAM ASSEMBLED IN CASES WITH OUTPUTS FOR MOUNTING ON PRINTED BOARDS IN SYSTEMS OF INDUSTRIAL ELECTRONICS OF CIVIL PURPOSE. DO NOT CONTAIN CRYPTOGRAPHY0.051066.53ChinaSHENZHEN  CHINAVEST OST LLC
1/20/20228542329000ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE)0.0285.21ThailandMANSFIELD CENTERPM ELECTRONICS LLC

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