1/26/2022 | 8542327500 | MONOLITHIC INTEGRATED MICROCIRCUIT, REpresentING RAM MEMORY, INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT. MEMORY SIZE 32M-BIT 4M X 8 , POWER SUPPLY 3-3.3V, OPERATING TEMPERATURE -40░C ~ 85░C (TC). DOES NOT HAVE F | 0.18 | 1902.11 | Taiwan | PRAGUE | GLOBAL KEY LLC |
1/28/2022 | 8542327500 | ELECTRONIC INTEGRATED CIRCUITS - ELECTRICALLY ERASABLE COMPLETELY REPROGRAMMABLE PERMANENT MEMORY DEVICES (ES PROM) EEPROM WITH RAM RAM 2 KBIT (MEMORY CHIP), ASSEMBLED IN A CASE WITH OUTPUTS, FOR INSTALLATION ON PLATE | 0.26 | 144.44 | China | EKATERENBURG | VEST OST LLC |
1/19/2022 | 8542327500 | ELECTRONIC INTEGRATED CIRCUITS - ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT MEMORY DEVICES (ES PROM) EEPROM WITH RAM RAM 128 KBIT (MEMORY CHIP), ASSEMBLED IN A CASE WITH OUTPUTS, FOR PLA MOUNTING | 0.07 | 103.23 | France | HONG KONG | VEST OST LLC |
1/14/2022 | 8542327500 | ELECTRONIC INTEGRAL CIRCUITS - ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT MEMORY DEVICES (ES PROM) EEPROM WITH RAM RAM 32 KBIT (MEMORY CHIP), ASSEMBLED IN A CASE WITH OUTPUTS, FOR INSTALLATION ON PLATE | 0.07 | 133.26 | Philippines | HONG KONG | VEST OST LLC |
1/12/2022 | 8542327500 | ELECTRONIC INTEGRAL CIRCUITS - ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT MEMORY DEVICES (ES PROM) EEPROM WITH RAM RAM 512 KBIT (MEMORY CHIP), ASSEMBLED IN A CASE WITH OUTPUTS, FOR PLA MOUNTING | 0.07 | 296.68 | China | HONG KONG | VEST OST LLC |