1/21/2022 | 8542329000 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A 512 Kb FERROELECTRIC RAM RAM WITH AN OPERATING FREQUENCY UP TO 40 MHz AND A SPI DATA TRANSMISSION INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRATED CIRCUIT WITH A WORKING | 0 | 47.55 | United States of America | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8542329000 | MONOLITHIC INTEGRAL CIRCUIT: FPVM MEMORY (CONFIGURATION MEMORY) WITH A MEMORY CAPACITY OF 1 MBIT, VOLTAGE 3.3 V, OPERATING FREQUENCY 33 MHz, OPERATING TEMPERATURE 0 GR.TS TO + 70 GR.TS. DESIGNED FOR SURFACE MOUNTING ON PRINTED | 0.98 | 9109.61 | Philippines | MUNSTER GERMANY | PRIUS ELECTRONICS LLC |
1/21/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.43 | 1829.43 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL SCHEMES, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, NAND FLASH MEMORY, MEMORY SIZE: 4 GBIT, VOLTAGE: 2.7-3.6 V, OPERATING TEMPERATURE: -40-+85 ?, TOTAL-330 PCS; | 0.03 | 790.58 | Japan | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRATED CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT EQUIPMENT SCRAP, FOR INSTALLATION IN ELECTRONIC BOARDS, FPGA - IC CONFIGURATION MEMORY, MEMORY SIZE: 16 Mbit, VOLTAGE: 3.3 V, OPERATING TEMPERATURE: - ?4+8 - | 0.01 | 23.83 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/24/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY F-RAM WITH A VOLUME OF 16 KBIT. (OPERATING TEMPERATURE RANGE: -40...+125 C) (NOT HAZARDOUS WASTE) | 0.02 | 25.31 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.01 | 62.33 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542329000 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - STORAGE DEVICE OF THE TYPE OF FERROELECTRIC MEMORY (F-RAM) WITH A VOLUME OF 1 Mbit. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.24 | 914.97 | Thailand | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN THE FUNCTION OF CRYPTOGRAPHY (ENCRYPTION), NO EQUIPMENT SCRAP, NAND FLASH MEMORY, MEMORY SIZE: 4 GBIT, VOLTAGE: 2.7-3.6 V, OPERATING TEMPERATURE: -40-+85 ?, TOTAL-52 PCS; | 0.03 | 525.38 | South Korea | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/30/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS, DOES NOT CONTAIN CRYPTOGRAPHY (ENCRYPTION) FUNCTION, NOT EQUIPMENT SCRAP, FOR INSTALLATION IN ELECTRONIC BOARDS, FPVM - IC CONFIGURATION MEMORY, MEMORY SIZE: 1 Mbit, VOLTAGE: 3.3-5 V, OPERATING TEMPERATURE: -0+70 , TOTAL- | 0.05 | 556.22 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |