1/31/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 128 Mbps AND A FREQUENCY OF UP TO 532 MHz WITH SUPPORT FOR DATA TRANSFER VIA SPI INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN THE CASE | 0.09 | 240.87 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/31/2022 | 8542326100 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 256 Mbit FLASH MEMORY WITH AN OPERATING FREQUENCY OF UP TO 532 MHz AND A DATA TRANSFER RATE OF UP TO 66 MB/S VIA SPI INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 | 0.01 | 9.6 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 MB AND A DATA READ TIME OF 70 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A TSOP CASE WITH 48 CONTACTS. IS NOT A SCRAP | 0.33 | 108.29 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/27/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT, AT45DB041E SERIES. THE PRODUCT IS A 4 Mbit SERIAL ACCESS SPI FLASH MEMORY AND A FREQUENCY OF UP TO 85 MHz. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3, | 0.14 | 297.08 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 MB AND A DATA READ TIME OF 70 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A WFBGA CASE WITH 48 CONTACTS. | 1.59 | 4325.64 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |
1/24/2022 | 8542326100 | ELECTRICALLY ERASSABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 2 MB | 0.01 | 11.9 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/27/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM -40 TO +85 32 MB | 0.04 | 1166.89 | Taiwan | ST PETERSBURG RUSSIA | ALTRABETA LLC |
1/21/2022 | 8542326100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - FLASH EEPROM (NOR) STORAGE DEVICE WITH MEMORY 32 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0 | 85.95 | Taiwan | ST PETERSBURG RUSSIA | ALKON ELECTRONICS LLC |
1/12/2022 | 8542326100 | MONOLITHIC INTEGRATED MICROCIRCUIT, REpresentING A FLASH MEMORY, INTENDED FOR USE IN TELECOMMUNICATION EQUIPMENT. MEMORY SIZE 64MB (8M X 8), POWER SUPPLY 2.7V ~ 3.6V, OPERATING TEMPERATURE -40░C ~ 105░C (TC). NOT AROUND | 0.38 | 882.12 | Taiwan | PHOENIX AIRPORT | GLOBAL KEY LLC |
1/27/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 512 MB | 0.02 | 285.47 | Taiwan | HONGKONG AIRPORT | ALTRABETA LLC |