1/31/2022 | 8542323100 | MONOLITHIC MICROCIRCUITS, APPLICATION FIELD GENERAL INDUSTRIAL, DYNAMIC RANDOM MEMORY 512MBIT (DOSE), ORGANIZATION 16MBITH32, FREQUENCY 167 MHz, OUTPUT PARALLEL, VOLTAGE.3.3 V, OPERATING TEMPERATURE 0-+7 | 0.2 | 542.3 | Taiwan | ST PETERSBURG RUSSIA | INTEC SERVICE LLC |
1/26/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 512 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.19 | 225.41 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/21/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 256 MB MEMORY. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.55 | 839.05 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 64 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.03 | 32.61 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 256 MB MEMORY. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.63 | 838.41 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/18/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.4 | 838.26 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/29/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 512 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.04 | 11.19 | China | HONG KONG | IC COMPONENT LLC |
1/14/2022 | 8542323100 | INTEGRAL CIRCUITS, MEMORY, MICROSCIRCUIT - PART NUMBER AT45DB021B-SC, BODY SOIC-8(0.209, 5.30MM), OPERATING TEMPERATURES -40-+85░C . SUPPLY VOLTAGE 2.7 V - 3.6 V. MEMORY 2MB. SURFACE MOUNTED MEMORY MAXIMUM 512 MB | 0.07 | 39.22 | China | SHENZHEN CHINA | ALTAIR LLC |
1/14/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 512 MB MEMORY. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.01 | 84.38 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/20/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.18 | 464.87 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |