1/11/2022 | 8541410004 | INORGANIC WHITE LIGHT-EMISSIONING DIODES, MOUNTED IN THE CASE: SERIES DURIS E 2835 GWJTLPS1.EM-KL-XX55-1-150-C-R33-EOS . TYPE OF SEMICONDUCTOR - GALLIUM NITRIDE. POWER SUPPLIES, POWER CORD AND SWITCHES ARE NOT EXCLUDED. | 56.5 | 7952.13 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/11/2022 | 8541410008 | LIGHT EMITTING DIODES (LED) ARE A BLUE LUMINOUS SEMICONDUCTOR CRYSTAL BASED ON GALLIUM NITRIDE (GAN), MOUNTED AND FLUSHED ON A SPECIAL SUBSTRATE, SEALED WITH A YELLOW COLOR SILICONE-phosphor mixture, PRODUCT | 0.22 | 192.63 | Unknown | Unknown | CJSC CENTERSTROYSVET |
1/18/2022 | 8541410004 | INORGANIC LIGHT-EMISSIONING DIODES, MOUNTED IN THE CASE: RED COLOR OF OSLON SQUARE HYPER RED SERIES. TYPE OF SEMICONDUCTOR - GALLIUM NITRIDE. POWER SUPPLIES, POWER CORD AND SWITCHES ARE NOT EXCLUDED. | 0.22 | 828.7 | China | ST PETERSBURG RUSSIA | ALR LLC |
1/31/2022 | 8541410008 | LIGHT EMITTING DIODES (LED) ARE A BLUE LUMINOUS SEMICONDUCTOR CRYSTAL BASED ON GALLIUM NITRIDE (GAN), MOUNTED AND FLUSHED ON A SPECIAL SUBSTRATE, SEALED WITH A YELLOW COLOR SILICONE-phosphor mixture, PRODUCT | 0.53 | 480.13 | Unknown | Unknown | RUSALIGHT LLC |
1/26/2022 | 8541410002 | LIGHT EMITTING DIODES, INORGANIC, ON A RIGID PRINTED BOARD, NON-LASER, INTENDED FOR INSTALLATION ON THE PANEL OF INDUSTRIAL EQUIPMENT, NOT SCRAP ELECTRICAL EQUIPMENT: LED, SEMICONDUCTOR TYPE - INDIUM GALLIUM NITRIDE, NOT UV AND IR RADIATION | 0 | 6.35 | Taiwan | SHENZHEN CHINA | RONTA LLC |
1/15/2022 | 8541410001 | INORGANIC LED CRYSTALS, NOT INTEGRATED IN THE CASE, NON-LASER, BASED ON GALLIUM NITRIDE (CHEM. FORMULA GAN), INTENDED FOR USE IN THE PRODUCTION OF SMD-LEDS: | 26.72 | 59066.8 | China | KLAIPEDA LITHUANIA | TECHNOLOGY LLC |
1/11/2022 | 8541410008 | LIGHT EMITTING DIODES (LED) ARE A BLUE LUMINOUS SEMICONDUCTOR CRYSTAL BASED ON GALLIUM NITRIDE (GAN), MOUNTED AND FLUSHED ON A SPECIAL SUBSTRATE, SEALED WITH A YELLOW COLOR SILICONE-phosphor mixture, PRODUCT | 0.31 | 465.04 | Unknown | Unknown | MASSEF TECHNOLOGIES LLC |
1/19/2022 | 8541900000 | 1-PART OF LIGHT EMITTING DIODE: SEMICONDUCTOR LED CHIP (GALLIUM NITRIDE ON SAPPHIRE) WITH METAL CONTACTS. USED IN LED PRODUCTION AS A SEMICONDUCTOR LIGHT SOURCE: OPERATING VOLTAGE 2.9 - 3.0 V. NOT A SCRAP | 6.9 | 27595.3 | China | ST PETERSBURG RUSSIA | PRODUCTION COMPANY CLOVER LLC |
1/26/2022 | 8541410008 | LIGHT EMITTING DIODES (LED) ARE A BLUE LUMINOUS SEMICONDUCTOR CRYSTAL BASED ON GALLIUM NITRIDE (GAN), MOUNTED AND FLUSHED ON A SPECIAL SUBSTRATE, SEALED WITH A YELLOW COLOR SILICONE-phosphor mixture, PRODUCT | 0.61 | 621.36 | Unknown | Unknown | SVETOGRAD SPB LLC |
1/20/2022 | 8541410004 | LIGHT EMITTING DIODES (LED) FOR BOARD MOUNTING. WITHOUT POWER SUPPLY. WITHOUT POWER CORD. WITHOUT SWITCH. FOR VOLTAGE 3 VOLT. NOT ORGANIC LEDS. INDIUM GALLIUM NITRIDE (INGAN) CRYSTAL, SILICON CARBIDE (SIC) SUBSTRATE. RADIOACTIVE SOURCES | 5.7 | 20798.1 | Malaysia | MOSCOW RUSSIA | MICROEM JSC |