1/28/2022 | 8541100009 | DIODES OTHER THAN LIGHT AND LASER DIODES (NOT SCRAP ELECTRICAL EQUIPMENT), CHINA | 0.74 | 356.69 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/21/2022 | 8541100009 | DIODES OTHER THAN LIGHT AND LASER DIODES (NOT SCRAP ELECTRICAL EQUIPMENT), CHINA | 0.02 | 36.77 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/16/2022 | 8541100009 | DIODES OTHER THAN LIGHT AND LASER DIODES (NOT SCRAP ELECTRICAL EQUIPMENT), CHINA | 3.46 | 342.4 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/21/2022 | 8541100009 | DIODES OTHER THAN LIGHT AND LASER DIODES (NOT SCRAP ELECTRICAL EQUIPMENT), CHINA | 30.78 | 3996.11 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/19/2022 | 8541100009 | DIODES OTHER THAN LIGHT AND LASER DIODES (NOT SCRAP ELECTRICAL EQUIPMENT), CHINA | 0.02 | 27.76 | China | HONG KONG | DISPLAY COMPONENT JSC |
1/23/2022 | 8541100009 | LASER DIODE WITH A CW POWER OF 20 MW IN THE SPECTRAL RANGE OF 405 NM, MANUFACTURED ON THE BASIS OF HIGHLY EFFICIENT INGAINP QUANTUM-SIZE STRUCTURES. PRODUCED IN STANDARD TO-18 (O 5.6 MM) CASES. APPLIED AS A RADIANT | 2 | 143.53 | China | ST PETERSBURG RUSSIA | FTI OPTRONIK LLC |
1/15/2022 | 8541100009 | DIODES OTHER THAN LIGHT AND LASER DIODES (NOT SCRAP ELECTRICAL EQUIPMENT), CHINA | 29.12 | 4474.54 | China | HONG KONG | EKVI LLC |
1/10/2022 | 8541100009 | DIODES OTHER THAN LIGHT AND LASER DIODES (NOT SCRAP ELECTRICAL EQUIPMENT), CHINA | 56.39 | 7899.3 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/28/2022 | 8541100009 | DIODES OTHER THAN LIGHT AND LASER DIODES (NOT SCRAP ELECTRICAL EQUIPMENT), CHINA | 0.12 | 151.2 | China | HONG KONG | DISPLAY COMPONENT JSC |