1/21/2022 | 8542329000 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A 512 Kb FERROELECTRIC RAM RAM WITH AN OPERATING FREQUENCY UP TO 40 MHz AND A SPI DATA TRANSMISSION INTERFACE. MADE IN THE FORM OF A MONOLITHIC INTEGRATED CIRCUIT WITH A WORKING | 0 | 47.55 | United States of America | MOSCOW RUSSIA | PLANAR LLC |
1/31/2022 | 8542329000 | ELECTRONIC INTEGRAL CIRCUITS - FRAM MEMORY CHIP (FERROELECTRIC RANDOM RAM MEMORY) FM25CL64B-GTR WITH 64KBIT MEMORY AND 3.3V SUPPLY VOLTAGE, WITH SPI INTERFACE SUPPORT AND NON-SHAPING CAPABILITY | 14.56 | 25254.8 | Thailand | ST PETERSBURG RUSSIA | ALR LLC |
1/26/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, MONOLITHIC, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (EEPROM), FLASH MEMORY WITH SERIAL DATA TRANSMISSION INTERFACE, HIGH-SPEED, IN MINIATURE PLASTIC CASE | 0.1 | 166.73 | China | SHENZHEN CHINA | TITAN MICRO LLC |
1/26/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, SOLID, ELECTRICALLY ERASABLE PERMANENT MEMORY (EEPROM), DATA MEMORY WITH SERIAL INTERFACE, FAST, LOW POWER CONSUMPTION, IN MINIATURE | 0.02 | 31.82 | China | SHENZHEN CHINA | TITAN MICRO LLC |
1/26/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, SOLID, ELECTRICALLY ERASABLE PERMANENT MEMORY (EEPROM), DATA MEMORY WITH SERIAL INTERFACE, FAST, LOW POWER CONSUMPTION, IN MINIATURE | 0.03 | 54.72 | China | SHENZHEN CHINA | TITAN MICRO LLC |
1/12/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, MONOLITHIC, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (EEPROM), FLASH MEMORY WITH SERIAL DATA TRANSMISSION INTERFACE, HIGH-SPEED, IN MINIATURE PLASTIC CASE | 0.06 | 291.42 | China | YUEN LONG HONG KONG | TITAN MICRO LLC |