1/22/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT COMBINED WITH OTHER COMPONENTS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSES, WITHOUT CONTENT OF ENCRYPTION AND CRYPTOGRAPHIC MEANS, NOT SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR SURFACES | 0.03 | 1327.81 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/22/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT COMBINED WITH OTHER COMPONENTS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSES, WITHOUT CONTENT OF ENCRYPTION AND CRYPTOGRAPHIC MEANS, NOT SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR SURFACES | 0.01 | 61.84 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/22/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT COMBINED WITH OTHER COMPONENTS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSES, WITHOUT CONTENT OF ENCRYPTION AND CRYPTOGRAPHIC MEANS, NOT SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR SURFACES | 0.01 | 20.51 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/18/2022 | 8542326100 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - FLASH ELECTRICALLY ERASABLE REPROGRAMMABLE CONSTANT | 0.94 | 655.38 | United States of America | MOSCOW RUSSIA | KOMPEL JSC |
1/17/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT COMBINED WITH OTHER COMPONENTS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, WITHOUT CONTENT OF ENCRYPTION AND CRYPTOGRAPHIC MEANS, NOT SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR SURFACES | 0.06 | 627.31 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/17/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT COMBINED WITH OTHER COMPONENTS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSES, WITHOUT CONTENT OF ENCRYPTION AND CRYPTOGRAPHIC MEANS, NOT SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR SURFACES | 0.04 | 206.6 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/19/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY VOLUME OF 2 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.05 | 106.24 | United States of America | HONG KONG | VEST OST LLC |
1/19/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASEABLE COMPLETELY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 4 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.06 | 345.18 | United States of America | HONG KONG | VEST OST LLC |
1/30/2022 | 8542326100 | ELECTRONIC INTEGRATED SCHEMES, NOT EQUIPMENT SCRAP, FOR INSTALLATION IN ELECTRONIC BOARDS, NOR FLASH MEMORY, MEMORY SIZE: 512 MBIT, VOLTAGE: 1.7-2 V, OPERATING TEMPERATURE: -40-+85 ?, TOTAL-10 PCS; | 0.01 | 105.66 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/20/2022 | 8542326100 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - FLASH ELECTRICALLY ERASABLE REPROGRAMMABLE CONSTANT | 0.67 | 310.36 | United States of America | MOSCOW RUSSIA | KOMPEL JSC |