1/23/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0 | 21.74 | China | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.13 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.52 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.19 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.51 | China | MOSCOW RUSSIA | STATUS LLC |
1/25/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.23 | 376.42 | China | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/21/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.09 | China | MOSCOW RUSSIA | STATUS LLC |
1/24/2022 | 8542326100 | ELECTRONIC INTEGRATED CIRCUITS, REPRESENTING MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT - FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF NO MORE THAN 512MBIT, FOR USE IN HOUSEHOLD | 1.47 | 696 | China | EKATERENBURG | VEST OST LLC |
1/3/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 0.12 | 1265.09 | China | KRANJ | VOSTOK JSC |
1/3/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 0.22 | 1305.62 | China | KRANJ | VOSTOK JSC |