1/11/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUITS: | 0.05 | 188.3 | China | MOSCOW RUSSIA | MDIKAM EK LLC |
1/11/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUITS: | 0.07 | 298.44 | China | MOSCOW RUSSIA | MDIKAM EK LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUITS ARE INTENDED FOR APPLICATION IN ELECTRICAL ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY. | 0.02 | 16.05 | China | MOSCOW RUSSIA | ELECTRO S LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUIT. THE PRODUCT IS A FLASH MEMORY WITH A VOLUME OF 16 GB AND A FREQUENCY OF UP TO 200 MHz. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A 153-PIN TFBGA CASE. | 0.15 | 1490.1 | China | MOSCOW RUSSIA | PLANAR LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUITS: | 0 | 11.31 | China | MOSCOW RUSSIA | SNABINTER LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUITS ARE INTENDED FOR APPLICATION IN ELECTRICAL ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY. | 0.02 | 35.78 | China | MOSCOW RUSSIA | ELECTRO S LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUITS ARE INTENDED FOR APPLICATION IN ELECTRICAL ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY. | 0.02 | 110.44 | China | MOSCOW RUSSIA | ELECTRO S LLC |
1/30/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUITS: | 2.54 | 14977.3 | Japan | MOSCOW RUSSIA | SNABINTER LLC |
1/21/2022 | 8542326900 | MONOLITHIC INTEGRAL CIRCUITS: | 1.29 | 6082.74 | United States of America | MOSCOW RUSSIA | SNABINTER LLC |
1/31/2022 | 8542326900 | ELECTRONIC INTEGRAL CIRCUIT. THE PRODUCT IS A 2 GB FLASH MEMORY WITH A DATA TRANSMISSION BUS OF 8 BIT AND A READ/WRITE TIME OF 20 NS. MADE IN THE FORM OF A MONOLITHIC INTEGRAL CIRCUIT WITH OPERATING VOLTAGE UP TO 3.6 V IN A SOT C 48 CASE | 2.2 | 5938.5 | Taiwan | MOSCOW RUSSIA | PLANAR LLC |