1/20/2022 | 8542323100 | ELECTRONIC INTEGRAL-SYNCHRONOUS DYNAMIC RANDOM MEMORY DEVICES MT48LC16M16A2P-6A IT:G WITH SINGLE BAUD RATE, LIMIT. FOR UNIVERSAL USE IN MICROELECTRONICS. | 0.12 | 185.35 | Taiwan | ST PETERSBURG RUSSIA | ALR LLC |
1/20/2022 | 8542323100 | MONOLITHIC INTEGRAL CIRCUITS ARE INTENDED FOR APPLICATION IN ELECTRICAL ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY. | 0 | 1820.61 | Taiwan | HONG KONG | ELECTRONICS IMPORT EXPORT LLC |
1/18/2022 | 8542323100 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - DYNAMIC RANDOM MEMORY DEVICE WITH 256 MEGABIT MEMORY | 1.02 | 1405.6 | Taiwan | MOSCOW RUSSIA | KOMPEL JSC |
1/17/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.01 | 90.24 | Taiwan | ST PETERSBURG RUSSIA | SPETSVOLTAZH LLC |
1/18/2022 | 8542323100 | MONOLITHIC INTEGRAL CIRCUITS ARE INTENDED FOR APPLICATION IN ELECTRICAL ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY. | 0.01 | 203.66 | Taiwan | HONG KONG | KOMPAS RK LLC |
1/17/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.01 | 33.3 | Taiwan | VANTAA AIRPORT | KVAZAR LLC |
1/25/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.15 | 280.78 | Taiwan | HONG KONG | STRELOY ON ORDER OF LLC MFC POINT OF SUPPORT LLC |
1/14/2022 | 8542323100 | MICROSCHEMICS OF SYNCHRONOUS DYNAMIC MEMORY (SDRAM) ELECTRONIC INTEGRAL DIGITAL, ASSEMBLED, WITH OUTPUTS; DESIGNED FOR MOUNTING ON PRINTED BOARDS OF COMPUTER EQUIPMENT, INDUSTRIAL ELECTRONICS EQUIPMENT, MEMORY 256MBIT. NOT USED | 0.91 | 2329.87 | Taiwan | HONG KONG | VEST OST LLC |
1/14/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 512 MB MEMORY. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.01 | 84.38 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/20/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DOSE) DRAM WITH MEMORY 256 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.18 | 464.87 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |