1/25/2022 | 8541410006 | DIODES LIGHT EMITTING INFRARED, IN THE CASE, SERIES OSLON BLACK SFH4715AS . POWER SUPPLY, POWER CORD, SWITCHES ARE ABSENT. TYPE OF SEMICONDUCTOR GALLIUM ARSENIDE. | 1.4 | 4911.11 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/25/2022 | 8541410006 | Light-emitting diodes (LED), EXCEPT LASER DIODES, OF INFRARED RADIATION SPECTRUM (RADIATION WAVE LENGTHS MORE THAN 760 NM): ART: HPIR103 - 1 PC. | 0.01 | 318.37 | Germany | BERGKIRCHEN GERMANY | COMPANY AZIMUT PHOTONICS LLC |
1/25/2022 | 8541410006 | Light-emitting diodes (LED), EXCEPT LASER DIODES, OF INFRARED RADIATION SPECTRUM (RADIATION WAVE LENGTHS MORE THAN 760 NM): REF: 3049447 - 4 PCS. | 0.04 | 598.13 | Germany | OLCHING MUNICH | COMPANY AZIMUT PHOTONICS LLC |
1/10/2022 | 8541410006 | SEMICONDUCTOR DEVICE: OUTPUT ROUND INFRARED INORGANIC LIGHT EMITTING DIODE. WAVE LENGTH OF THE MAXIMUM RADIATION IS 940 NM. SCATTERING ANGLE 20 DEGREES. WORKING TEMPERATURE FROM -40 TO +85 DEGREES. CELSIUS. MAXIMUM FORWARD VOLTAGE 1.5 VOL | 31.4 | 3431.61 | China | COWLUN | ELECTROKOM VPK LLC |
1/20/2022 | 8541410006 | LIGHT EMITTING DIODES (LED) OF THE INFRARED RADIATION SPECTRUM (RADIATION WAVE LENGTHS MORE THAN 760 NM). (NOT HAZARDOUS WASTE) | 0 | 11.21 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/13/2022 | 8541410006 | LIGHT EMITTING DIODES (LED) OF THE INFRARED RADIATION SPECTRUM (RADIATION WAVE LENGTHS MORE THAN 760 NM). (NOT HAZARDOUS WASTE) | 0.01 | 9.68 | Taiwan | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/13/2022 | 8541410006 | LIGHT EMITTING INORGANIC INFRARED DIODES, IN A CASE, WITH SEMICONDUCTOR ELEMENTS OF THE OSLON BLACK SFH4716AS SERIES. POWER SUPPLY, POWER CORD, SWITCHES ARE ABSENT. | 5.6 | 22948.2 | Malaysia | ST PETERSBURG RUSSIA | ALR LLC |
1/25/2022 | 8541410006 | PHOTO-SENSITIVE SEMICONDUCTOR ELEMENTS: LIGHT GRID HORMANN IS ORGANIC INFRARED LEDS (RADIATION WAVELENGTHS MORE THAN 760 NM) FOR 24V VOLTAGE BUILT IN THE GUIDE RAIL. USED FOR INSTALLATION IN | 14.25 | 2937.45 | Denmark | LUDENSCHID | HERMANH RUSSIA LLC |
1/17/2022 | 8541410006 | INFRARED INORGANIC LIGHT EMITTING DIODE, THIS IS A SEMICONDUCTOR DEVICE WITH ELECTRONIC HOLE R-P JUNCTION OR METAL-SEMICONDUCTOR CONTACT | 0.01 | 62.57 | China | SHENZHEN CHINA | OOO TD NEON EK |
1/17/2022 | 8541410006 | LIGHT EMITTING DIODES (LED) OF INFRARED RADIATION SPECTRUM (RADIATION WAVE LENGTHS MORE THAN 760 NM), EXCEPT LASER DIODES: | 0.2 | 356.9 | China | HONG KONG | BER LLC |