1/26/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.01 | 5.34 | Taiwan | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/5/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.01 | 81.74 | Taiwan | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/8/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.01 | 11.21 | Taiwan | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/8/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0.02 | 16.04 | Taiwan | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/24/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT FOR MOUNTING ON PRINTED BOARDS OF ELECTRONIC DEVICES, DESIGNED FOR INDUSTRIAL ELECTRONICS SYSTEMS, DOES NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR MILITARY PURPOSE, NOT RADIATION RESISTANT, NOT SCRAP | 0.08 | 116.32 | Taiwan | IZHEVSK KIYASOVO | ELITAN TRADE LLC |
1/21/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT FOR MOUNTING ON PRINTED BOARDS OF ELECTRONIC DEVICES, DESIGNED FOR INDUSTRIAL ELECTRONICS SYSTEMS, DOES NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR MILITARY PURPOSE, NOT RADIATION RESISTANT, NOT SCRAP | 0.05 | 51.2 | Taiwan | IZHEVSK KIYASOVO | ELITAN TRADE LLC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASEABLE COMPLETELY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY VOLUME OF 16 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.38 | 114.75 | Taiwan | EKATERENBURG | VEST OST LLC |
1/12/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.48 | 2894.38 | Taiwan | HONG KONG | VEST OST LLC |
1/19/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT FOR MOUNTING ON PRINTED BOARDS OF ELECTRONIC DEVICES, DESIGNED FOR INDUSTRIAL ELECTRONICS SYSTEMS, DOES NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR MILITARY PURPOSE, NOT RADIATION RESISTANT, NOT SCRAP | 0.04 | 38.76 | Taiwan | IZHEVSK KIYASOVO | ELITAN TRADE LLC |
1/24/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUIT FOR MOUNTING ON PRINTED BOARDS OF ELECTRONIC DEVICES, DESIGNED FOR INDUSTRIAL ELECTRONICS SYSTEMS, DOES NOT HAVE ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT FOR MILITARY PURPOSE, NOT RADIATION RESISTANT, NOT SCRAP | 0.01 | 8.04 | Taiwan | IZHEVSK KIYASOVO | ELITAN TRADE LLC |