1/23/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. DOES NOT HAVE ENCRYPTION FUNCTIONS | 0 | 21.74 | China | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/25/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.23 | 376.42 | China | MOSCOW RUSSIA | URAL TELECOM SYSTEMS LLC |
1/28/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS CONTAINING ASSEMBLED ACTIVE ELEMENTS (DIODES, TRANSISTORS), WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.05 | 206.8 | China | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/18/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY CAPACITY NOT MORE THAN 512 Mbps, ARE INTENDED FOR APPLICATION IN RADIO-ELECTRONIC ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE. | 0.02 | 132.97 | China | SHENZHEN CHINA | DAS ELECTRO LLC |
1/18/2022 | 8542326100 | A FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MB, IS NOT A RADIO ELECTRONIC AND/OR HIGH FREQUENCY DEVICE, NON MILITARY USE, NOT A SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR INDUSTRIAL ASSEMBLY: SEE APPENDIX | 3.12 | 6423 | China | MOSCOW RUSSIA | DIDZHIKOM LLC |
1/28/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0 | 32.16 | China | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/25/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, CONTAINING ACTIVE ELEMENTS (DIODES, TRANSISTORS), ASSEMBLED, WITH OUTPUTS, MADE ON A SINGLE SEMICONDUCTOR CRYSTAL, INTENDED FOR INDUSTRIAL ELECTRONICS SYSTEMS. NO FUNCTION | 0.2 | 896.37 | China | PRAGUE | URAL TELECOM SYSTEMS LLC |
1/19/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.12 | 948.51 | China | HONG KONG | VEST OST LLC |
1/25/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 64 Mbit FOR USE IN INDUSTRIAL ELECTRIC | 0.42 | 122.23 | China | HONG KONG | VEST OST LLC |