1/23/2022 | 8542326900 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.2 | 3587.5 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/27/2022 | 8542326900 | INTEGRATED CHIP,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 1.2 | 17942.9 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/27/2022 | 8542326900 | INTEGRATED CHIP,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 4.65 | 75329.6 | South Korea | INCHHON SEOUL | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542326900 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME MORE THAN 512 MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 1.55 | 19625.9 | South Korea | MOSCOW RUSSIA | SAMSUNG ELECTRONICS RUS COMPANY LLC |