1/31/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME NOT MORE THAN 512MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.79 | 783.56 | China | HONG KONG | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/19/2022 | 8542326100 | FLASH-ELECTRICALLY ERASUABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE, THAT IS A MONOLITHIC DIGITAL INTEGRAL CIRCUIT, ASSEMBLED, WITH OUTPUTS, FOR INDUSTRIAL ELECTRONICS SYSTEMS, COMPUTER EQUIPMENT. MEMORY 32MBIT; NAPR | 0.12 | 948.51 | China | HONG KONG | VEST OST LLC |
1/25/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME NOT MORE THAN 512MBIT, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY),NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.9 | 367.36 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/14/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 1.8 | 752.08 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/19/2022 | 8542326100 | INTEGRATED MICROCIRCUIT,MONOLITHIC,DIGITAL,MEMORY,FLASH-ES PROM,MEMORY VOLUME 4 Mbit, WITHOUT ENCRYPTION FUNCTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT,FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 13.62 | 14706.5 | China | SHANGHA CHINA | SAMSUNG ELECTRONICS RUS COMPANY LLC |