1/21/2022 | 8541290000 | MODULES OF BIPOLAR TRANSISTORS WITH INSULATED GATE (IGBT) WITH DISPOSIVE POWER OF 1800 W. TYPE OF SEMICONDUCTOR SILICON. COLLECTOR-EMMITTER VOLTAGE 1700V, GATE-EMMITTER VOLTAGE 20V, CONTINUOUS COLLECTOR DC CURRENT 300A. SUITABLE FOR | 36.57 | 7340.57 | Hungary | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
1/25/2022 | 8541290000 | IGBT TRANSISTOR MODULES -IGBT MODULES IGBT- IGBT HALF-BRIDGE IGBT BIPOLAR TRANSISTOR MODULE WITH INSULATED GATE, USED EXCLUSIVELY FOR INTERNAL INSTALLATION. | 360 | 44468.9 | China | ZHUZHOU CHINA | ELKOMTECH LLC |
1/21/2022 | 8541900000 | PARTS OF SEMICONDUCTOR DEVICES. DESIGNED EXCLUSIVELY FOR ASSEMBLY OF SEMICONDUCTOR IGBT MODULES: | 65 | 10858.5 | Finland | VANTAA AIRPORT | TD PROTON ELECTROTEX CJSC |
1/14/2022 | 8541900000 | PARTS OF SEMICONDUCTOR MODULES. DESIGNED FOR ASSEMBLY OF IGBT MODULES: | 5.4 | 1334.74 | China | BEIJING CHINA | TD PROTON ELECTROTEX CJSC |
1/31/2022 | 8541590000 | SEMICONDUCTOR MODULES ARE ASSEMBLY FROM 2 POWER SEMICONDUCTOR IGBT 1700V TRANSISTORS AND 2 INVERSED PROTECTIVE DIODES, ENCLOSED IN A PLASTIC CASE WITH A HEAT-REMOVING METAL BASE. DESIGNED FOR USE WITH | 126.5 | 32339.8 | Slovakia | NUERNBERG GERMANY | CJSC AUTOMATED SYSTEMS AND COMPLEXES |
1/21/2022 | 8541290000 | TRANSISTOR MODULES - BASED ON IGBT-TRANSISTORS. | 6 | 7930.85 | Germany | BERLIN | TRADING HOUSE SIMMETRON ELECTRONIC COMPONENTS LLC |
1/11/2022 | 8541290000 | TRANSISTORS OTHER THAN PHOTOTRANSISTORS: PRODUCT CATEGORY: BIPOLAR TRANSISTOR MODULES (IGBT) DISPOSED POWER: 142 W | 0 | 1228 | Japan | SHENZHEN CHINA | SPARK TT LLC |
1/31/2022 | 8541290000 | INSULATED GATE BIPOLAR TRANSISTOR MODULES (IGBT) FS50R17KE3B17BPSA1 , WITH POWER. DIFFUSION 345 W. TYPE OF SEMICONDUCTOR SILICON. | 92.8 | 27258.3 | Hungary | ST PETERSBURG RUSSIA | ALR LLC |