1/21/2022 | 8541290000 | MODULES OF BIPOLAR TRANSISTORS WITH INSULATED GATE (IGBT) WITH DISPOSIVE POWER OF 1800 W. TYPE OF SEMICONDUCTOR SILICON. COLLECTOR-EMMITTER VOLTAGE 1700V, GATE-EMMITTER VOLTAGE 20V, CONTINUOUS COLLECTOR DC CURRENT 300A. SUITABLE FOR | 36.57 | 7340.57 | Hungary | YEKATERINBURG KOLTSOVO AIRPORT | URAL IMPORTER LIMITED |
1/28/2022 | 8541290000 | TRANSISTORS: IGBT MODULE OF SEMICONDUCTOR TRANSISTORS POWER DISSIPATION MORE THAN 1W FOR INSTALLATION AS A PART OF DEVICES | 3.5 | 1350.1 | Hungary | MOSCOW RUSSIA | KOMPEL JSC |
1/31/2022 | 8541290000 | TRANSISTORS: IGBT MODULE OF SEMICONDUCTOR TRANSISTORS POWER DISSIPATION 1150W FOR INSTALLATION AS A PART OF DEVICES | 1.56 | 282.77 | Hungary | MOSCOW RUSSIA | KOMPEL JSC |
1/24/2022 | 8541290000 | INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MODULE | 1.8 | 327.22 | Hungary | HONG KONG | NPO ELECTRONIC SYSTEMS LLC |
1/28/2022 | 8541290000 | IGBT MODULE WITH INSULATED GATE BIPOLAR TRANSISTORS, POWER DISPOSION 1800W, ART.FF300R17KE4, CURRENT 440A, 1700V, RESISTANCE 0.75M?. APPLICATIONS: HIGH POWER CONVERTERS, MOTOR DRIVES, UPS, WIND TURBINES. TOTAL | 161 | 43217.4 | Hungary | TAIPEI AIRPORT TAIWAN | GORIZONT LLC |
1/31/2022 | 8541290000 | INSULATED GATE BIPOLAR TRANSISTOR MODULES (IGBT) FS50R17KE3B17BPSA1 , WITH POWER. DIFFUSION 345 W. TYPE OF SEMICONDUCTOR SILICON. | 92.8 | 27258.3 | Hungary | ST PETERSBURG RUSSIA | ALR LLC |
1/27/2022 | 8541290000 | TRANSISTORS: IGBT MODULE OF SEMICONDUCTOR TRANSISTORS POWER DISSIPATION 360W FOR INSTALLATION AS A PART OF DEVICES | 4.51 | 1293.53 | Hungary | GROSSOSTHEIM GERMANY | KOMPEL JSC |