1/30/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.04 | 127.81 | United States of America | VANTAA AIRPORT | KVAZAR LLC |
1/22/2022 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT COMBINED WITH OTHER COMPONENTS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSES, WITHOUT CONTENT OF ENCRYPTION AND CRYPTOGRAPHIC MEANS, NOT SCRAP OF ELECTRICAL EQUIPMENT INTENDED FOR SURFACES | 0.01 | 154.74 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/26/2022 | 8542323900 | ELECTRONIC INTEGRATED MONOLITHIC DYNAMIC RANDOM MEMORY (DOSES, DRAM). (NOT A SCRAP OF ELECTRICAL EQUIPMENT, NOT RADIATION RESISTANT). APPLICATION: CONSTRUCTION OF RADIO ELECTRONIC EQUIPMENT FOR | 0.24 | 471.38 | United States of America | HONG KONG | ONSHOR WIND LLC |
1/30/2022 | 8542323900 | ELECTRONIC INTEGRATED, DYNAMIC RANDOM MEMORY DEVICES (DOSES) WITH A MEMORY CAPACITY OF MORE THAN 512 MBIT CONTAINS CRYPTOGRAPHY (ENCRYPTION) FUNCTIONS, NOT SCRAP EQUIPMENT, DRAM MEMORY, MEMORY SIZE: 2 GBIT, VOLTAGE: 1.7-9 | 0.02 | 622.29 | United States of America | TSUEN WAN HONG KONG | SPHERE OF ELECTRONICS LLC |
1/30/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.07 | 100.01 | United States of America | VANTAA AIRPORT | KVAZAR LLC |
1/30/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.45 | 5363.53 | United States of America | VANTAA AIRPORT | KVAZAR LLC |
1/30/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.27 | 860.38 | United States of America | VANTAA AIRPORT | KVAZAR LLC |