1/11/2022 | 8542323900 | ELECTRONIC INTEGRATED MONOLITHIC DIGITAL - DYNAMIC RANDOM MEMORY DEVICES (DOZE) WITH 2 GB MEMORY, FOR SUPPLY VOLTAGE 1.283 - 1.45 V, OBTAINED USING CMOS TECHNOLOGY (COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR) SRAN | 0.01 | 55.1 | China | HONG KONG | KOMPOTRADE LLC |
1/5/2022 | 8542323900 | MONOLITHIC INTEGRAL CIRCUIT, MEMORY, VOLUME 2 GB, IN PLASTIC CASE TSOP-86, FOR MOUNTING ON A PRINTED BOARD. USED FOR MANUFACTURE OF RADIO-ELECTRONIC EQUIPMENT. | 0.04 | 604.63 | China | HONG KONG | T COMPONENT SP LLC |
1/19/2022 | 8542323900 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - DYNAMIC RANDOM MEMORY DEVICE WITH VOLUME | 0.23 | 441.65 | China | MOSCOW RUSSIA | KOMPEL JSC |
1/17/2022 | 8542323900 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - DYNAMIC RANDOM MEMORY DEVICE WITH MEMORY 16384 | 0.58 | 2760.73 | China | MOSCOW RUSSIA | KOMPEL JSC |
1/17/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.1 | 1171.53 | China | VANTAA AIRPORT | DZHIVIKOM LLC |
1/17/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.62 | 2139.03 | China | VANTAA AIRPORT | DZHIVIKOM LLC |
1/24/2022 | 8542323900 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0.04 | 178.48 | China | VANTAA AIRPORT | KVAZAR LLC |