1/31/2022 | 8542323100 | INTEGRATED SCHEMES: MONOLITHIC ELECTRONIC INTEGRATED SCHEME - DYNAMIC RANDOM MEMORY WITH VOLUME | 1.25 | 1024.65 | China | MOSCOW RUSSIA | KOMPEL JSC |
1/24/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT, DO NOT CREATE ELECTROMAGNETIC INTERFERENCE: | 0 | 68.55 | China | VANTAA AIRPORT | KVAZAR LLC |
1/3/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 0.9 | 4466.62 | China | KRANJ | VOSTOK JSC |
1/3/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 0.64 | 2171.64 | China | KRANJ | VOSTOK JSC |
1/3/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 0.19 | 1020.67 | China | KRANJ | VOSTOK JSC |
1/26/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 512 MBIT. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.19 | 225.41 | China | SINGAPORE AIRPORT | SVARNOY LLC |
1/21/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC MICROCIRCUIT - DYNAMIC RANDOM MEMORY (DRAM) WITH 256 MB MEMORY. (OPERATING TEMPERATURE RANGE: -40...+85 C) (NOT HAZARDOUS WASTE) | 0.55 | 839.05 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |
1/5/2022 | 8542323100 | INTEGRAL CIRCUIT, SYNCHRONIZED DYNAMIC MEMORY WITH RANDOM SAMPLE ORDER (SDRAM), VOLUME 128 Mbit, IN A PLASTIC CASE VFBGA-90, FOR MOUNTING ON A PRINTED BOARD. USED FOR MANUFACTURE OF RADIO-ELECTRONIC EQUIPMENT. | 0.32 | 7004.44 | China | HONG KONG | T COMPONENT SP LLC |
1/31/2022 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 0.2 | 1530.11 | China | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/18/2022 | 8542323100 | ELECTRONIC INTEGRAL MONOLITHIC DYNAMIC RANDOM MEMORY DEVICES (DOSE) DRAM WITH MEMORY 64 MBIT. (OPERATING TEMPERATURE RANGE: 0...+70 C) (NOT HAZARDOUS WASTE) | 0.03 | 32.61 | China | MANSFIELD CENTER | PM ELECTRONICS LLC |