1/26/2022 | 8541100009 | DIODE. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). THIS MAIN PROPERTIES OF THE DIODE IS USED TO CONVERT AC INTO | 65 | 6577.6 | China | VUKSI | ENERGOMERA JSC |
1/18/2022 | 8541100009 | DIODES. OPERATING PRINCIPLE: TWO-ELECTRODE ELECTRONIC DEVICE HAS DIFFERENT CONDUCTIVITY DEPENDING ON THE DIRECTION OF THE ELECTRIC CURRENT. APPLIED AS COMPONENTS FOR PRODUCTION OF SERVERS. | 0.6 | 69.95 | China | SHENZHEN CHINA | RIKOR ELECTRONICS OJSC THROUGH STS LOGISTICS LLC |
1/12/2022 | 8541100009 | DIODE IS A TWO-ELECTRODE ELECTRONIC DEVICE, HAS A DIFFERENT CONDUCTIVITY DEPENDING ON THE DIRECTION OF THE ELECTRIC CURRENT. A DIODE ELECTRODE CONNECTED TO THE POSITIVE POLE OF A CURRENT SUPPLY WHEN THE DIODE IS OPEN (I.E. HAS A LOW RESISTANCE | 2 | 1388.07 | Philippines | PHOENIX AIRPORT | SIBELKOM LOGISTIC LLC |
1/24/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 345.87 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8541100009 | DIODE VS-10MQ060NTRPBF. 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES THE CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). IS A PN JUNCTION MADE ON A SILICON CRYSTAL. NOT | 0.78 | 348.23 | China | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/27/2022 | 8541290000 | TRANSISTORS, EXCEPT PHOTOTRANSISTORS: A THREE-ELECTRODE POWER SEMICONDUCTOR DEVICE COMBINING TWO TRANSISTORS IN ONE SEMICONDUCTOR STRUCTURE: BIPOLAR AND FIELD. POWER DISPOSION 1660 W. NOT MILITARY PURPOSE, NOT SCRAP | 16 | 2972.07 | Germany | SHENZHEN CHINA | SPARK TT LLC |
1/11/2022 | 8541100009 | DIODE IS A TWO-ELECTRODE ELECTRONIC DEVICE, HAS A DIFFERENT CONDUCTIVITY DEPENDING ON THE DIRECTION OF THE ELECTRIC CURRENT. A DIODE ELECTRODE CONNECTED TO THE POSITIVE POLE OF A CURRENT SUPPLY WHEN THE DIODE IS OPEN (I.E. HAS A LOW RESISTANCE | 3.23 | 804.8 | Taiwan | NOVOSIBIRSK AIRPORT TOLMACHEVO | SIBELKOM LOGISTIC LLC |
1/21/2022 | 8541300009 | SEMICONDUCTOR DEVICES - THYRISTORS, NOT PHOTO-SENSITIVE, FOR CONTROLLING A POWERFUL LOAD USING A WEAK SIGNAL SUPPLIED TO THE CONTROL ELECTRODE: | 1.31 | 1023.45 | Brazil | ST PETERSBURG RUSSIA | VEG ELECTRIC CIS LLC |
1/18/2022 | 8541100009 | DIODE BAS21,215. DIODE - A 2-ELECTRODE SEMICONDUCTOR DEVICE WITH SINGLE-SIDE CONDUCTIVITY (WELL PASSES A CURRENT THROUGH ITSELF IN ONE DIRECTION AND VERY BADLY IN THE OTHER). THIS MAIN PROPERTIES OF THE DIODE IS USED TO CONVERT THE VARIABLE | 0.78 | 170.4 | Malaysia | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8541210000 | TRANSISTOR. A BIPOLAR FORWARD CONDUCTIVITY TRANSISTOR (PNP) IS A THREE-ELECTRODE SEMICONDUCTOR DEVICE WITH TWO PARALLEL NP JUNCTIONS AT A CLOSE DISTANCE. THE TRANSISTOR CONSISTS OF THREE MAIN AREAS: EMMITTER | 30.9 | 4232.19 | China | DUNGGUAN | ENERGOMERA JSC |