1/12/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, MONOLITHIC, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (EEPROM), FLASH MEMORY WITH SERIAL DATA TRANSMISSION INTERFACE, HIGH-SPEED, IN MINIATURE PLASTIC CASE | 0.06 | 291.42 | China | YUEN LONG HONG KONG | TITAN MICRO LLC |
1/24/2022 | 8542329000 | CHIP MB85RC64PNF-G-JNERE1. IS A MONOLITHIC INTEGRAL DIGITAL MICROCIRCUIT. (ELECTRICALLY ERASSABLE REPROGRAMMABLE, ROM). ITS COMPOSITION HAS ACTIVE ELEMENTS - TRANSISTORS AND PASSIVE ELEMENTS - | 31.08 | 34370.1 | Japan | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/18/2022 | 8542329000 | CHIP MB85RC64PNF-G-JNERE1. THIS IS A MONOLITHIC INTEGRAL DIGITAL IC. ELECTRICALLY ERASABLE, REPROGRAMMABLE, PERMANENT STORAGE DEVICES. ITS COMPOSITION HAS ACTIVE ELEMENTS - TRANSISTORS AND PASSIVE ELEMENTS - | 19.24 | 21277.5 | Japan | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/10/2022 | 8542329000 | CHIP MB85RC64PNF-G-JNERE1. THIS IS A MONOLITHIC INTEGRAL DIGITAL IC. ELECTRICALLY ERASABLE, REPROGRAMMABLE, PERMANENT STORAGE DEVICES. ITS COMPOSITION HAS ACTIVE ELEMENTS - TRANSISTORS AND PASSIVE ELEMENTS - | 25.16 | 29654.6 | Japan | STAVROPOL DISTRICT S NEW BINARADKA | ENERGOMERA JSC |
1/26/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, MONOLITHIC, ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (EEPROM), FLASH MEMORY WITH SERIAL DATA TRANSMISSION INTERFACE, HIGH-SPEED, IN MINIATURE PLASTIC CASE | 0.1 | 166.73 | China | SHENZHEN CHINA | TITAN MICRO LLC |
1/26/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, SOLID, ELECTRICALLY ERASABLE PERMANENT MEMORY (EEPROM), DATA MEMORY WITH SERIAL INTERFACE, FAST, LOW POWER CONSUMPTION, IN MINIATURE | 0.02 | 31.82 | China | SHENZHEN CHINA | TITAN MICRO LLC |
1/26/2022 | 8542329000 | INTEGRAL MICROCIRCUIT, DIGITAL, SOLID, ELECTRICALLY ERASABLE PERMANENT MEMORY (EEPROM), DATA MEMORY WITH SERIAL INTERFACE, FAST, LOW POWER CONSUMPTION, IN MINIATURE | 0.03 | 54.72 | China | SHENZHEN CHINA | TITAN MICRO LLC |
1/18/2022 | 8542329000 | INTEGRATED MICROCIRCUIT OF NON-VOLUNTARY MEMORY - ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE. IT IS USED AS A PART OF COMPLEX ELECTRONIC DEVICES FOR LONG-TERM STORAGE OF INFORMATION. | 2.98 | 2195 | China | MOSCOW RUSSIA | START XXI CENTURY LLC |
1/27/2022 | 8542329000 | STORAGE, ELECTRICALLY PROGRAMMABLE DEVICES WITHOUT ENCRYPTION FUNCTIONS: | 0.1 | 241.41 | Germany | MAGDEBURG GERMANY | JOINT STOCK COMPANY BEGARAT M |
1/22/2022 | 8542329000 | ELECTRONIC INTEGRATED CIRCUITS - ELECTRICALLY ERASEABLE FULLY REPROGRAMMABLE - FERROELECTRIC STORAGE DEVICES (FRAM) OBTAINED BY COMBINING FERROELECTRIC AND SEMICONDUCTOR MATERIALS. MICROCIRCUIT | 0.08 | 1166.06 | Thailand | EKATERENBURG | VED COMPONENT LLC |