1/28/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0.16 | 119.74 | United States of America | MOSCOW RUSSIA | BALTELECTRON LLC |
1/15/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0 | 2.54 | United States of America | MOSCOW RUSSIA | BALTELECTRON LLC |
1/19/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY VOLUME OF 2 MBIT FOR USE IN INDUSTRIAL ELECTRIC | 0.05 | 106.24 | United States of America | HONG KONG | VEST OST LLC |
1/29/2022 | 8542327500 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - ELECTRICALLY ERASABLE REPROGRAMMABLE CONSTANT | 0.01 | 201.51 | United States of America | MOSCOW RUSSIA | KOMPEL JSC |
1/18/2022 | 8542326100 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - FLASH ELECTRICALLY ERASABLE REPROGRAMMABLE CONSTANT | 0.94 | 655.38 | United States of America | MOSCOW RUSSIA | KOMPEL JSC |
1/28/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0 | 6.94 | United States of America | MOSCOW RUSSIA | BALTELECTRON LLC |
1/15/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0.04 | 247.35 | United States of America | HONG KONG | BALTELECTRON LLC |
1/15/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0 | 2.75 | United States of America | MOSCOW RUSSIA | BALTELECTRON LLC |
1/18/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0.05 | 183.05 | United States of America | MOSCOW RUSSIA | BALTELECTRON LLC |
1/27/2022 | 8542326900 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 1.9 V OPERATING TEMPERATURE FROM - 55 TO + 100 1 GB | 0.4 | 644.23 | United States of America | HONGKONG AIRPORT | ALTRABETA LLC |