1/25/2022 | 8534001900 | PRINTED DIAGRAM, SINGLE-LAYER GLASS-TEXTOLITE BOARDS: PRINTED BOARD 4242.12100601 - 24 PCS. (BOARD THICKNESS 2.0MM, BOARD SIZE 310*310, 1*1 PCS, NUMBER OF LAYERS - 1). ARE A BOARD ON THE SURFACE OF WHICH ELECTRICALLY CONDUCTIVE | 10.2 | 324.15 | China | EKATERENBURG | PO URAL OPTICAL MECHANICAL PLANT NAMED AFTER E S YALAMOV JSC |
1/25/2022 | 8542327500 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - ELECTRICALLY ERASABLE REPROGRAMMABLE CONSTANT | 1.2 | 1059.41 | China | SINGAPORE AIRPORT | BELIV THROUGH LLC |
1/25/2022 | 8542327500 | INTEGRATED CIRCUITS: MONOLITHIC ELECTRONIC INTEGRAL CIRCUIT - ELECTRICALLY ERASABLE REPROGRAMMABLE CONSTANT | 0.32 | 911.34 | China | SINGAPORE AIRPORT | BELIV THROUGH LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.01 | 8.6 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/25/2022 | 8542327500 | ELECTRONIC INTEGRATED ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT STORAGE DEVICES (ES PROM) EEPROM WITH A MEMORY CAPACITY OF 64 KBIT - DESIGNED FOR USE IN SYSTEMS OF INDUSTRIAL ELECTRONICS OF CIVIL PURPOSE. NOT | 1.49 | 1690.38 | China | HONG KONG | VEST OST LLC |
1/25/2022 | 8542326100 | ELECTRONIC INTEGRATED STORAGE DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES FLASH-ES PROM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 64 Mbit FOR USE IN INDUSTRIAL ELECTRIC | 0.42 | 122.23 | China | HONG KONG | VEST OST LLC |
1/31/2022 | 8534001100 | PRINTED DIAGRAM, GLASS-TESTOLITE MULTILAYER BOARDS: PRINTED BOARD 3160.10300601 - 65 PCS. (BOARD THICKNESS 1.5MM, BOARD SIZE 90*40, 1*1 PC. NUMBER OF LAYERS - 2). REPRESENTS A BOARD ON THE SURFACE OF WHICH ELECTRICALLY CONDUCTIVE | 0.6 | 160.03 | China | EKATERENBURG | PO URAL OPTICAL MECHANICAL PLANT NAMED AFTER E S YALAMOV JSC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 1.25 | 4410 | China | ST PETERSBURG RUSSIA | PIKMIKRO LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.01 | 6.3 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |
1/28/2022 | 8542326100 | INTEGRAL CIRCUIT OF ELECTRICALLY ERASSABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (EEPROM) WITH MEMORY CAPACITY NOT MORE THAN 512 Mbit. | 0.05 | 27 | China | ST PETERSBURG RUSSIA | GAMMA ENGINEERING LLC |