1/21/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 16 MB | 0.01 | 26.1 | Malaysia | SHENZHEN CHINA | ALTRABETA LLC |
1/21/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0.01 | 75.53 | Malaysia | NORT MAYAMI BEACH | BALTELECTRON LLC |
1/18/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0.01 | 17.52 | Malaysia | MOSCOW RUSSIA | BALTELECTRON LLC |
1/17/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT ROM INTEGRAL MICROCIRCUIT VOLTAGE 5.5 V OPERATING TEMPERATURE FROM - 40 TO + 85 256 KB | 0.01 | 18.2 | Malaysia | HONGKONG AIRPORT | ALTRABETA LLC |
1/26/2022 | 8542326900 | ELECTRICALLY ERASABLE REPROGRAMMEABLE PERMANENT MEMORY (ES PROM), WITH MORE THAN 512 MB MEMORY | 1.91 | 4990.75 | Malaysia | HONG KONG | PR ELECTRONICS LLC |
1/26/2022 | 8542326100 | MONOLITHIC ELECTRONIC INTEGRATED CIRCUITS: ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (FLASH-ES PROM), NON RADIATION RESISTANT, NOT SCRAP OF ELECTRICAL EQUIPMENT | 0.03 | 27 | Malaysia | HONG KONG | ONSHOR WIND LLC |
1/18/2022 | 8542327500 | MONOLITHIC ELECTRONIC INTEGRATED SCHEME - ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY DEVICE (ES PROM) WITH A MEMORY CAPACITY OF 2 KBIT, THE FUNCTION OF ENCRYPTION, CRYPTOGRAPHY IS ABSENT. WORKING TEMPERATURE FROM - 40 TO + 85 DEGREES. FROM. | 0.03 | 63.04 | Malaysia | PEACHTHREE CITY | DEI SYSTEMS LLC |
1/21/2022 | 8542326100 | ELECTRICALLY ERASEABLE PERMANENT MEMORY IN THE FORM OF INTEGRAL MICROCIRCUIT VOLTAGE 3.6 V OPERATING TEMPERATURE FROM - 40 TO + 85 16 MB | 0.03 | 63.94 | Malaysia | SHENZHEN CHINA | ALTRABETA LLC |
1/19/2022 | 8542326900 | ELECTRICALLY ERASURE REPROGRAMMABLE SINGLE-CRYSTAL MEMORY DEVICES DO NOT CONTAIN CRYPTOGRAPHIC FUNCTIONS FOR PRODUCTION OF EL. CIVIL MODULES: | 0.45 | 12999.1 | Malaysia | ST PETERSBURG RUSSIA | DEVICE CONSULTING LLC |
1/26/2022 | 8542327500 | ELECTRICALLY ERASABLE REPROGRAMMABLE PERMANENT MEMORY (ES PROM): | 0.02 | 178.44 | Malaysia | MOSCOW RUSSIA | SMART VIP LLC |