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FInd Latest Russia Import Data of Electrical engineering under HS Code 8541290000

Discover latest Russia import data of Electrical engineering under HS code 8541290000. Search Russia imports data by Country, Product Name, HS Code Price, buyer, supplier name, Port & shipping information. Ultilize these crucial insights for organizing successful marketing strategy. Scale your Business with our authentic Russia Import Data.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/29/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR (MODULE). POWER DISPOSION 160W. VOLTAGE COLLECTOR-EMMITTER 1200V. CURRENT 50A. SIZE 107.5 X 45 X 17MM. IS NOT A SCRAP. USED IN ELECTRICAL ENGINEERING0.1876.4HungaryHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541290000MRW SEMICONDUCTOR DEVICE::N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 30V. CURRENT 179A. POWER DISPOSION 125W. USED IN ELECTRICAL ENGINEERING. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. ELKLIM0.0777.62MexicoHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541290000SEMICONDUCTOR DEVICES: N-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 96 W. VOLTAGE DRAIN-SOURCE +/-20V. CURRENT 100A. DIMENSIONS 6.1 X 5.35 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0123.54MalaysiaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/29/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 216 W. VOLTAGE COLLECTOR-EMMITTER 600 V. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0544.23United States of AmericaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541290000SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 110W. VOLTAGE DRAIN-SOURCE 60 V. CURRENT 20A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.09221.46United States of AmericaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/29/20228541290000SEMICONDUCTOR DEVICES: N-CHANNEL MOSFET TRANSISTOR. USED IN ELECTRICAL ENGINEERING. VOLTAGE Drain-SOURCE 500V, CURRENT 48A. SCATTERING POWER 500W. DIMENSIONS: 19.96 X 5.13 X 26.16MM. HIPERFET SERIES0.0360.3GermanyHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/29/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0425.42ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541290000SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 20V. SCATTERING POWER 1.6W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.014.53ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541290000SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.017.62ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/26/20228541290000SEMICONDUCTOR DEVICES: BIPOLAR TRANSISTOR WITH INSULATED GATE. VOLTAGE COLLECTOR-EMMITTER 600V, MAXIMUM CONTINUOUS COLLECTOR CURRENT 30A. MAXIMUM POWER DISPOSION 178W. USED IN ELECTRICAL ENGINEERING0.0112.74ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC

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Russia Trade Data gives you instant access to verified Russia Electrical engineerings Imports Data under HS Code 8541290000. You can find yearly, month-wise, or quarterly Russia Export statistics at www.russiatradedata.com.

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