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FInd Latest Russia Import Data of Electrical engineering under HS Code 8541210000

Discover latest Russia import data of Electrical engineering under HS code 8541210000. Search Russia imports data by Country, Product Name, HS Code Price, buyer, supplier name, Port & shipping information. Ultilize these crucial insights for organizing successful marketing strategy. Scale your Business with our authentic Russia Import Data.

DateHS CodeProduct DetailsNet WeightTotal Value (USD)CountryShipment PlaceBuyer
1/9/20228541210000TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES:0.9545.3ChinaMOSCOW  RUSSIATRION STROY LLC
1/22/20228541210000TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES:0.68173.87ChinaMOSCOW  RUSSIATRION STROY LLC
1/27/20228541210000TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES:0.772219.05ChinaMOSCOW  RUSSIATRION STROY LLC
1/26/20228541210000SEMICONDUCTOR DEVICES: PNP-CHANNEL MOSFET TRANSISTOR. VOLTAGE COLLECTOR-EMTTER -45V, CURRENT -500MA. SCATTERING POWER 0.31W. DIMENSIONS: 3 X 1.4 X 1MM. USED IN ELECTRICAL ENGINEERING0.0115.39ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/23/20228541210000SEMICONDUCTOR DEVICE: P-CHANNEL MOSFET TRANSISTOR. USED IN ELECTRICAL ENGINEERING. VOLTAGE -250V, CURRENT -0.14A. SCATTERING POWER 0.5W. DIMENSIONS: 3 X 1.6 X 1.1MM0.0121.03MalaysiaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/29/20228541210000SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM.0.0842.94ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/29/20228541210000SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMTTER 50 V. CURRENT 200 MA. DIMENSIONS 2.2 X 1.35 X 1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING0.0872ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/17/20228541210000SEMICONDUCTOR DEVICE: NPN/PNP-CHANNEL TRANSISTOR. POWER DISPERSION 200MW. VOLTAGE DRAIN-SOURCE 160V. CURRENT 200MA. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING.0.0428.53ChinaHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541210000SEMICONDUCTOR DEVICES: DIGITAL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE 50 V. DIMENSIONS 2.9 X 1.6 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING06.19PhilippinesHayesYUE COMPLEX SERVICE SOLUTIONS JSC
1/28/20228541210000SEMICONDUCTOR DEVICES: NPN-CHANNEL MOS-TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMMITTER 50 V. DRAIN CURRENT 150MA. DIMENSIONS 2 X 1.25 X 0.9MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING09.42ThailandHayesYUE COMPLEX SERVICE SOLUTIONS JSC

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Russia Trade Data gives you instant access to verified Russia Electrical engineerings Imports Data under HS Code 8541210000. You can find yearly, month-wise, or quarterly Russia Export statistics at www.russiatradedata.com.

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