1/9/2022 | 8541210000 | TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES: | 0.95 | 45.3 | China | MOSCOW RUSSIA | TRION STROY LLC |
1/22/2022 | 8541210000 | TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES: | 0.68 | 173.87 | China | MOSCOW RUSSIA | TRION STROY LLC |
1/27/2022 | 8541210000 | TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES: | 0.77 | 2219.05 | China | MOSCOW RUSSIA | TRION STROY LLC |
1/26/2022 | 8541210000 | SEMICONDUCTOR DEVICES: PNP-CHANNEL MOSFET TRANSISTOR. VOLTAGE COLLECTOR-EMTTER -45V, CURRENT -500MA. SCATTERING POWER 0.31W. DIMENSIONS: 3 X 1.4 X 1MM. USED IN ELECTRICAL ENGINEERING | 0.01 | 15.39 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/23/2022 | 8541210000 | SEMICONDUCTOR DEVICE: P-CHANNEL MOSFET TRANSISTOR. USED IN ELECTRICAL ENGINEERING. VOLTAGE -250V, CURRENT -0.14A. SCATTERING POWER 0.5W. DIMENSIONS: 3 X 1.6 X 1.1MM | 0.01 | 21.03 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICE:NPN-CHANNEL TRANSISTOR. USED IN ELECTRICAL ENGINEERING. MAXIMUM DRAIN SOURCE VOLTAGE 8 V, MAXIMUM CONTINUOUS DRAIN CURRENT 3.7 A. SCATTERING POWER 960MW. DIMENSIONS: 3.04 X 1.4 X 1.01MM. | 0.08 | 42.94 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541210000 | SEMICONDUCTOR DEVICES: N-CHANNEL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMTTER 50 V. CURRENT 200 MA. DIMENSIONS 2.2 X 1.35 X 1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.08 | 72 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/17/2022 | 8541210000 | SEMICONDUCTOR DEVICE: NPN/PNP-CHANNEL TRANSISTOR. POWER DISPERSION 200MW. VOLTAGE DRAIN-SOURCE 160V. CURRENT 200MA. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING. | 0.04 | 28.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541210000 | SEMICONDUCTOR DEVICES: DIGITAL TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE 50 V. DIMENSIONS 2.9 X 1.6 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 6.19 | Philippines | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541210000 | SEMICONDUCTOR DEVICES: NPN-CHANNEL MOS-TRANSISTOR. MAXIMUM POWER DISPOSION 200 MW. VOLTAGE COLLECTOR-EMMITTER 50 V. DRAIN CURRENT 150MA. DIMENSIONS 2 X 1.25 X 0.9MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0 | 9.42 | Thailand | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |