1/9/2022 | 8541210000 | TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES: | 0.95 | 45.3 | China | MOSCOW RUSSIA | TRION STROY LLC |
1/22/2022 | 8541210000 | TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES: | 0.68 | 173.87 | China | MOSCOW RUSSIA | TRION STROY LLC |
1/27/2022 | 8541210000 | TRANSISTORS, POWER DISSIPATION 0.3 W, GENERAL INDUSTRIAL PURPOSE FOR INSTALLATION IN ELECTRICAL ENGINEERING. EQUIPMENT NOT CONTAINING CRYPTOGRAPHIC MODULES, DRAG. METAL AND DRAG. STONES: | 0.77 | 2219.05 | China | MOSCOW RUSSIA | TRION STROY LLC |
1/29/2022 | 8541100009 | SEMICONDUCTOR DEVICES: SCHOTTKY DIODE. MAXIMUM REVERSE REPEATED VOLTAGE 650V, CONSTANT FORWARD CURRENT 30A. DIMENSIONS: 10.41 X 15.62 X 4.69MM. USED IN ELECTRICAL ENGINEERING | 0 | 5.82 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 75 W. DRAIN-SOURCE VOLTAGE 100 V. DIMENSIONS 6.35 X 5.4 X 0.95MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.04 | 25.42 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541600000 | QUARTZ RESONATOR (ASSEMBLED PIEZOELECTRIC CRYSTALS), FOR CREATING ELECTRIC PULSES OF A CERTAIN FREQUENCY. WORKING FREQUENCY: 8MHZ. DIMENSIONS: 8 X 5.5 X 3MM. CSTLS SERIES. USED IN ELECTRICAL ENGINEERING | 0 | 1.98 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/29/2022 | 8541600000 | QUARTZ RESONATOR (PIEZOELECTRIC ASSEMBLED CRYSTALS) FOR MOUNTING ON THE BOARD. TO CREATE ELECTRIC PULSES OF A CERTAIN FREQUENCY. USED IN ELECTRICAL ENGINEERING. OUTPUT SIGNAL FREQUENCY 8 MHZ. WORKING VOLTAGE 2.7-3.6V. DIMENSIONS: 7 X 5 X 1 | 0.04 | 14.67 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541100009 | SEMICONDUCTOR DEVICE: RECTIFYING DIODE. PEAK REVERSE REPEATED VOLTAGE 600V. MAXIMUM CONTINUOUS FORWARD CURRENT 1A. SIZE 4.75 X 2.95 X 2.2MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 21.41 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 20V. SCATTERING POWER 1.6W. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 4.53 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | SEMICONDUCTOR DEVICES: P-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 4.24 W. DRAIN-SOURCE VOLTAGE -100 V. CONTINUOUS DRAIN CURRENT 4.6A. DIMENSIONS 6.73 X 6.22 X 2.39MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 7.62 | China | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |