1/19/2022 | 8541290000 | TRANSISTOR - AN ELECTRONIC DEVICE FROM A SEMICONDUCTOR MATERIAL, USUALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL THE CURRENT IN THE ELECTRICAL CIRCUIT. COMMONLY USED FOR AMPLIFICATION, GENERATION AND CONVERSION OF ELECTRICAL SIGNALS | 0.8 | 1283.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/28/2022 | 8541290000 | FIELD TRANSISTOR, DESIGNED FOR SIGNAL AMPLIFICATION OF THE TRANSMISSION PATH, DISPOSION POWER 389 WATT. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT AND HAZARDOUS WASTE, IS NOT IN THE LIST OF RADIO ELECTRONIC EQUIPMENT AND (OR) HIGH-FREQUENCY DEVICES, | 2.16 | 7746 | Morocco | ST PETERSBURG RUSSIA | LABORATORY OF INTERNET OF THINGS LLC |
1/21/2022 | 8541290000 | SEMICONDUCTOR DEVICES: TRANSISTORS IN A CASE FOR MOUNTING ON PRINTED BOARDS, NOT A SCRAP OF ELECTRICAL EQUIPMENT. | 0 | 29.22 | Japan | ST PETERSBURG RUSSIA | EKOMP LLC |
1/5/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 0.01 | 743.69 | Philippines | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/1/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 1.3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0 | 3.72 | Philippines | SHENZHEN CHINA | RONTA LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.01 | 24.52 | Philippines | MANSFIELD CENTER | STOUT LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL TRANSISTOR (MODULE). POWER DISPOSION 160W. VOLTAGE COLLECTOR-EMMITTER 1200V. CURRENT 50A. SIZE 107.5 X 45 X 17MM. IS NOT A SCRAP. USED IN ELECTRICAL ENGINEERING | 0.18 | 76.4 | Hungary | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/28/2022 | 8541290000 | MRW SEMICONDUCTOR DEVICE::N-CHANNEL TRANSISTOR. VOLTAGE DRAIN-SOURCE 30V. CURRENT 179A. POWER DISPOSION 125W. USED IN ELECTRICAL ENGINEERING. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. ELKLIM | 0.07 | 77.62 | Mexico | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 96 W. VOLTAGE DRAIN-SOURCE +/-20V. CURRENT 100A. DIMENSIONS 6.1 X 5.35 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 23.54 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/31/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF MOSFET TRANSISTOR, SEMICONDUCTOR TYPE: SI - SILICON | 0.13 | 426 | Malaysia | HAMBURG AIRPORT GERMANY | STOUT LLC |