1/19/2022 | 8542326100 | MICROCIRCUITS - MEMORY DEVICES ELECTRICALLY ERASABLE FULLY REPROGRAMMABLE PERMANENT STORAGE DEVICES MRAM BASED ON A MATRIX STRUCTURE, WITH A MEMORY CAPACITY OF 1 Mbit FOR USE IN PERSONAL COMPUTERS. | 1.11 | 9743.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/23/2022 | 8542326100 | INTEGRAL MONOLITHIC FLASH-ES PROM, DOES NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.3 | 370.66 | China | MOSCOW RUSSIA | AURUM LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.13 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 6.52 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 3.19 | China | MOSCOW RUSSIA | STATUS LLC |
1/12/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.51 | China | MOSCOW RUSSIA | STATUS LLC |
1/20/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS ARE INTENDED FOR APPLICATION IN ELECTRICAL ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY. | 0.02 | 283.6 | China | MOSCOW RUSSIA | KIP LLC |
1/28/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MB (NOT A SCRAP OF ELECTRICAL EQUIPMENT, DOES NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), CHINA | 0.06 | 1573.09 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/28/2022 | 8542326100 | FLASH-ES PROM WITH A MEMORY MAXIMUM 512 MB (NOT A SCRAP OF ELECTRICAL EQUIPMENT, DOES NOT HAVE THE FUNCTION OF ENCRYPTION (CRYPTOGRAPHY), CHINA | 0 | 220.82 | China | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/21/2022 | 8542326100 | MONOLITHIC INTEGRAL CIRCUITS ARE INTENDED FOR APPLICATION IN ELECTRICAL ASSEMBLY FOR GENERAL INDUSTRIAL PURPOSE, WITHOUT THE FUNCTION OF ENCRYPTION AND CRYPTOGRAPHY. | 0 | 4.64 | China | MOSCOW RUSSIA | ELECTRO S LLC |