1/21/2022 | 8542326100 | FLASH-ES PROM WITH MEMORY MAXIMUM 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION (CRYPTOGRAPHY) FUNCTION, TAIWAN (CHINA) | 0.05 | 35.69 | Taiwan | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/3/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 20.79 | 523.94 | Taiwan | KRANJ | VOSTOK JSC |
1/26/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY2 | 0.5 | 1203.7 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |
1/11/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP | 0.05 | 364.92 | Taiwan | HONG KONG | RADIOTECHSNAB LLC |
1/31/2022 | 8542326100 | FLASH-ES PROM WITH MEMORY MAXIMUM 512 MB (NOT SCRAP ELECTRICAL EQUIPMENT, DO NOT HAVE ENCRYPTION (CRYPTOGRAPHY) FUNCTION, TAIWAN (CHINA) | 0.46 | 642.55 | Taiwan | MOSCOW RUSSIA | DEVELOPMENT NN LLC |
1/30/2022 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, NOT FOR FIRE AUTOMATICS, NOT FOR MILITARY PURPOSE, NOT FOR ELECTRICAL EQUIPMENT SCRAP, INTENDED FOR MOUNTING ON ELECTRONIC EQUIPMENT PRINTED BOARDS: | 3.7 | 38645.5 | Taiwan | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/23/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.54 | 757.22 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/23/2022 | 8542326100 | INTEGRATED, MONOLITHIC MICROCIRCUITS, MEMORY, FLASH-ES PROM, MEMORY VOLUME NOT MORE THAN 512 Mbps, WITHOUT FUNCTIONS OF ENCRYPTION (CRYPTOGRAPHY), NOT SCRAP OF ELECTRICAL EQUIPMENT, FOR INDUSTRIAL ASSEMBLY OF SAMSUNG EQUIPMENT | 0.54 | 521.62 | Taiwan | TAIPEI AIRPORT TAIWAN | SAMSUNG ELECTRONICS RUS COMPANY LLC |
1/13/2022 | 8542326100 | INTEGRATED ELECTRONIC CIRCUITS, FLASH-ES PP MEMORY WITH A MEMORY CAPACITY OF NO MORE THAN 512 Mbps, NOT A SCRAP OF ELECTRICAL EQUIPMENT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO-ELECTRONIC EQUIPMENT | 0 | 5.32 | Taiwan | MOSCOW RUSSIA | STATUS LLC |
1/13/2022 | 8542326100 | ELECTRONIC INTEGRATED MONOLITHIC SINGLE-CRYSTAL ASSEMBLED, ELECTRICALLY ERASE REPROGRAMMABLE PERMANENT MEMORY DEVICES, FLASH-ES PROM WITH MEMORY MAXIMUM 512 MBIT, NOT WASTE, NOT SCRAP, MEMORY CAPACITY | 0.02 | 12.29 | Taiwan | VANTAA AIRPORT | GAMMA LIMITED LLC |