1/21/2022 | 8541290000 | TRANSISTOR, SERIES BSC072N04LD . THE PRODUCT IS A FIELD TRANSISTOR WITH A MAXIMUM DISPOSIVE POWER OF 65 W AND A WORKING VOLTAGE BETWEEN THE DRAIN-SOURCE OF UP TO 40 V. MADE IN A TDSON-8-4 CASE. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. IMPORTED INTO | 0 | 7.44 | Malaysia | MOSCOW RUSSIA | PLANAR LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR DEVICES: N-CHANNEL MOS TRANSISTOR. MAXIMUM POWER DISSIPATION 96 W. VOLTAGE DRAIN-SOURCE +/-20V. CURRENT 100A. DIMENSIONS 6.1 X 5.35 X 1.1MM. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.01 | 23.54 | Malaysia | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/11/2022 | 8541290000 | BIPOLAR TRANSISTORS WITH A DISPOSIVE POWER OF MORE THAN 1 W, NOT OPTOELECTRONIC PHOTOTRANSISTORS, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT, DO NOT CONTAIN DRAG. METALS ARE USED AS SPARE PARTS FOR CONTROL UNIT REPAIR | 0.32 | 5113.88 | Malaysia | VILNIUS AIRPORT LITHUANIA | ATOL LLC |
1/31/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF MOSFET TRANSISTOR, SEMICONDUCTOR TYPE: SI - SILICON | 0.13 | 426 | Malaysia | HAMBURG AIRPORT GERMANY | STOUT LLC |
1/21/2022 | 8541290000 | TRANSISTORS WITH A DISPOSIVE POWER OF MORE THAN 1W FOR WIDE APPLICATION IN THE MANUFACTURE OF INDUSTRIAL EQUIPMENT, NON-MILITARY PURPOSE AND HOUSEHOLD ELECTRONICS (NOT SCRAP ELECTRICAL EQUIPMENT). IS NOT A SPECIAL TECHNICAL TOOL FOR TAILOR | 0.09 | 111.98 | Malaysia | GUANGZHOU AIRPORT CHINA | SMT AYLOGIK LLC |
1/21/2022 | 8541290000 | TRANSISTORS WITH A DISPOSIVE POWER OF MORE THAN 1W FOR WIDE APPLICATION IN THE MANUFACTURE OF INDUSTRIAL EQUIPMENT, NON-MILITARY PURPOSE AND HOUSEHOLD ELECTRONICS (NOT SCRAP ELECTRICAL EQUIPMENT). IS NOT A SPECIAL TECHNICAL TOOL FOR TAILOR | 0.09 | 221.98 | Malaysia | GUANGZHOU AIRPORT CHINA | SMT AYLOGIK LLC |
1/19/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 3.7 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE SI - SILICON | 0.08 | 245.18 | Malaysia | SHENZHEN CHINA | STOUT LLC |
1/26/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISSIPATION 28.8 W, NOT SCRAP ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: RF FIELD TRANSISTORS, SEMICONDUCTOR TYPE: GAN-ON-SIC (NIT | 0.2 | 3710.87 | Malaysia | SHENZHEN CHINA | STOUT LLC |
1/1/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 19 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0 | 9.28 | Malaysia | SHENZHEN CHINA | RONTA LLC |
1/31/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 0.01 | 50.5 | Malaysia | SHENZHEN CHINA | ICE COMPONENTS LLC |