1/21/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, WITH A DISPOSIVE POWER LESS THAN 1 W, NOT A SCRAP OF ELECTRICAL EQUIPMENT, NOT POWER TRANSFORMERS, NOT FOR RAILWAY TRANSPORT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO ELECTRONIC EQUIPMENT | 0.01 | 10.14 | United States of America | MOSCOW RUSSIA | STATUS LLC |
1/27/2022 | 8541100009 | SEMICONDUCTOR DIODES, EXCEPT PHOTODIODES AND LEDS, NOT SCRAP OF ELECTRICAL EQUIPMENT, NOT POWER TRANSFORMERS, NOT FOR RAILWAY TRANSPORT, FOR INSTALLATION AND REPAIR OF HOUSEHOLD RADIO ELECTRONIC EQUIPMENT | 0.01 | 34.65 | United States of America | MOSCOW RUSSIA | STATUS LLC |
1/29/2022 | 8541290000 | SEMICONDUCTOR DEVICE: N-CHANNEL MOSFET TRANSISTOR. MAXIMUM POWER DISSIPATION 216 W. VOLTAGE COLLECTOR-EMMITTER 600 V. IS NOT A SCRAP OF ELECTRICAL EQUIPMENT. USED IN ELECTRICAL ENGINEERING | 0.05 | 44.23 | United States of America | Hayes | YUE COMPLEX SERVICE SOLUTIONS JSC |
1/5/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 0.34 | 187.96 | United States of America | SHENZHEN CHINA | ICE COMPONENTS LLC |
1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 1.25 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.29 | 355.39 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 2.5 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE: SI - SILICON | 0.01 | 19.24 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/22/2022 | 8541210000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 0.15 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE MANUFACTURE OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: BIPOLAR TRANSISTORS, SEMICONDUCTOR TYPE: SI - SILICON | 0.01 | 14.36 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/22/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, POWER DISPOSION 5.4 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: MOSFET, SEMICONDUCTOR TYPE - SI (SILICON) | 0.03 | 642.95 | United States of America | SHENZHEN CHINA | STOUT LLC |
1/27/2022 | 8541100009 | ELECTRONIC COMPONENTS: DIODES FOR POWER SOURCES OF ELECTRICAL EQUIPMENT, IN A PLASTIC CASE WITH 2 ELECTRIC CONTACTS ON THE EDGES, COMMON NAME: RESISTIVE DIODE, SEMICONDUCTOR TYPE: SILICON, NOMINAL VOLTAGE P 1000V | 1.56 | 20073.5 | United States of America | PSKOV | VMK LLC |
1/21/2022 | 8541290000 | SEMICONDUCTOR TRANSISTORS, EXCEPT PHOTOTRANSISTORS, DISPOSED POWER MORE THAN 1 W, NOT SCRAP OF ELECTRICAL EQUIPMENT, ARE USED IN THE PRODUCTION OF ELECTRONIC MODULES AND BOARDS FOR VARIOUS DEVICES: | 2.6 | 167203.3 | United States of America | SAINT PETERSBURG RUSSIAN FEDERATION | AVTEK GROUP LLC |