1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 12.73 | China | MOSCOW CITY | DELAN JSC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 151.44 | China | MOSCOW CITY | DELAN JSC |
1/19/2022 | 8542319010 | INTEGRATED MONOLITHIC CIRCUITS FOR VOLTAGE 5 V, IN WHICH CIRCUIT ELEMENTS (DIODES, TRANSISTORS, RESISTORS, CAPACITORS, INTER-ELEMENT CONNECTIONS) ARE FORMED IN THE MASS AND ON THE SURFACE OF THE SEMICONDUCTOR MATERIAL, ARE NOT A SCRAP OF ELECTRICAL EQUIPMENT | 0.01 | 36.54 | China | MOSCOW CITY | DELAN JSC |
1/22/2022 | 8542329000 | ELECTRONIC INTEGRATED CIRCUITS - ELECTRICALLY ERASEABLE FULLY REPROGRAMMABLE - FERROELECTRIC STORAGE DEVICES (FRAM) OBTAINED BY COMBINING FERROELECTRIC AND SEMICONDUCTOR MATERIALS. MICROCIRCUIT | 0.08 | 1166.06 | Thailand | EKATERENBURG | VED COMPONENT LLC |