1/31/2022 | 8541290000 | MOSFET TRANSISTOR, WHICH OPERATING PRINCIPLE IS BASED ON RESISTANCE MODULATION BY A TRANSVERSE ELECTRIC FIELD OF A SEMICONDUCTOR MATERIAL. | 0.18 | 146.08 | China | SHENZHEN CHINA | NPO GALILEOSKAY LLC |
1/13/2022 | 8541290000 | TRANSISTOR, IS AN ELECTRONIC DEVICE OF SEMICONDUCTOR MATERIAL, GENERALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL CURRENT IN AN ELECTRICAL CIRCUIT, USED TO AMPLIFY, GENERATE AND CONVERT ELECTRIC | 1.92 | 887.1 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/31/2022 | 8541290000 | MOSFET OPERATING PRINCIPLE OF WHICH IS BASED ON MODULATION OF RESISTANCE BY A TRANSVERSE ELECTRIC FIELD OF A SEMICONDUCTOR MATERIAL | 0.08 | 16.1 | China | SHENZHEN CHINA | NPO GALILEOSKAY LLC |
1/26/2022 | 8541290000 | TRANSISTOR, IS AN ELECTRONIC DEVICE OF SEMICONDUCTOR MATERIAL, GENERALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL CURRENT IN AN ELECTRICAL CIRCUIT, USED TO AMPLIFY, GENERATE AND CONVERT ELECTRIC | 1.71 | 918.84 | China | MOSCOW RUSSIA | MATRIX ELECTRONICS LLC |
1/24/2022 | 8541210000 | TRANSISTORS WITH A POWER OF DISPERSION OF 0.7 W ARE RADIO-ELECTRONIC COMPONENTS FROM A SEMICONDUCTOR MATERIAL, USED FOR AMPLIFICATION, GENERATION, SWITCHING AND CONVERSION OF ELECTRIC SIGNALS. | 37.4 | 85649.8 | China | A P Sheremetyevo MOSCOW RF | ONEST LOGISTICS LLC |
1/19/2022 | 8541290000 | TRANSISTOR - AN ELECTRONIC DEVICE FROM A SEMICONDUCTOR MATERIAL, USUALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL THE CURRENT IN THE ELECTRICAL CIRCUIT. COMMONLY USED FOR AMPLIFICATION, GENERATION AND CONVERSION OF ELECTRICAL SIGNALS | 0.8 | 1283.1 | China | MOSCOW RUSSIA | SIBELKOM LOGISTIC LLC |
1/10/2022 | 8541290000 | TRANSISTOR - AN ELECTRONIC DEVICE FROM A SEMICONDUCTOR MATERIAL, USUALLY WITH THREE TERMINALS, ALLOWING INPUT SIGNALS TO CONTROL THE CURRENT IN THE ELECTRICAL CIRCUIT. COMMONLY USED FOR AMPLIFICATION, GENERATION AND CONVERSION OF ELECTRICAL SIGNALS | 0.5 | 1369.01 | China | HONG KONG | SIBELKOM LOGISTIC LLC |